Abstract:Since the early 1960s, alloys are commonly grouped into two classes, featuring bound states in the bandgap (I) or additional, non-discrete band states (II). Microscopic material parameters for class I alloys can directly be extracted from photoluminescence (PL) spectra, whereas any conclusions drawn for class II alloys usually remain indirect and limited to macroscopic assertions. Nonetheless, here, we present a spectroscopic study on exciton localization in a so-called mixed crystal alloy (class II) that allows us to access microscopic alloy parameters. We study bulk In$_x$Ga$_{1-x}$N epilayers at the onset of alloy formation (0 $\leq$ $x$ $\leq$ 2.4%) in order to understand the material's particular robustness to defects. Based on an in-depth PL analysis it is demonstrated how different excitonic complexes (free, bound, and complex bound excitons) can serve as a probe to monitor the dilute limit of class II alloys. From an $x$-dependent linewidth analysis we extract the length scales at which excitons become increasingly localized, meaning that they convert from a free to a bound particle upon alloy formation. Already at x = 2.4% the average exciton diffusion length is reduced to 5.7 $\pm$ 1.3 nm at a temperature of 12 K, thus, detrimental exciton transfer mechanisms towards non-radiative defects are suppressed. In addition, the associated low temperature PL data suggests that a single indium atom does not suffice in order to permanently capture an exciton. Micro-PL spectra even give access to a forthright probing of silicon bound excitons embedded in a particular environment of indium atoms, thanks to the emergence of a hierarchy of individual, energetically sharp emission lines (full width at half maximum $\approx$ 300 $\mu$eV). Consequently, the present study allows us to extract first microscopic alloy properties formerly only accessible for class I alloys.

Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute Gaas1-Xnx Alloys: A Microphotoluminescence Study

Alloy States in Dilute GaAs1−xNx Alloys (X<1%)

Optical Study of Electronic States in Gaasn

Resonant Raman Scattering and Photoluminescence Emissions from above Bandgap Levels in Dilute GaAsN Alloys

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Selectively Excited Photoluminescence of GaAs1−xNx Single Quantum Wells

Resonant Raman Scattering with the E+ Band in a Dilute GaAs1−xNx Alloy (X=0.1%)

Optical Study of Localized and Delocalized States in Gaasn/Gaas

Unusual Carrier Thermalization in a Dilute Ga As 1 − X N X Alloy

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Optical Properties and Exciton Localization in Ganas/Gaas

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Probing alloy formation using different excitonic species: The particular case of InGaN

Optical Transitions In Ganas/Gaas Single Quantum Well

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Microscopic origin of light emission in Al_yGa_{1-y}N/GaN superlattice: Band profile and active site

Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN

Photoluminescence Related to the Two Dimensional Electron Gas in Modulation-Doped Al_x Ga_(1-x)N/GaN Heterostructures

Photoluminescence from Vacancy‐containing Defects in GaN

Photoluminescence of Energetic Particle-Irradiated Inxga1-Xn Alloys

Exciton localization and dynamics in GaNAsP nanowires