Abstract:Photoluminescence (PL) of n-InN grown by molecular beam epitaxy with Hall concentrations from 3.6 x 10(17) to 1.0 x 10(18) cm(-3) demonstrates new features as compared with that of the samples of previous generation which are characterized by a higher carrier concentration. The striking dependences of PL spectra on carrier concentration, temperature, and excitation density give evidences of a fast energy relaxation rate of photoholes and their equilibrium distribution over localized states. The well resolved structure consisting of three peaks was observed in the PL spectra of these samples in the energy interval from 0.50 to 0.67 eV at liquid helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da = 0.050-0.055 eV and the other one is attributable to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh = 0.005-0.010 eV and/or to the states of Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. Relative intensities of two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. At room temperature, the band-to-band recombination of free holes and electrons dominates in PL. Experimental results on PL and absorption are described by the model calculations under the assumptions of the band gap equal to 0.665-0.670 eV at zero temperature and zero carrier concentration and the non-parabolic conduction band with the effective mass at Gamma-point equal to 0.07 of free electron mass. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Effect of Carrier Confinement on Photoluminescence from Modulation-Doped AlxGa1−xN/GaN Heterostructures

Low Temperature Photoluminescence Properties of InGaN Films Grown on (0 1 2) Al2O3 and (0 0 0 1) Al2O3 Substrates by Low Pressure MOVPE

Selectively Excited Photoluminescence of GaAs1−xNx Single Quantum Wells

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute Gaas1-Xnx Alloys: A Microphotoluminescence Study

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Optical Study of Electronic States in Gaasn

Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/ga/sub 0.8/N-Gan Quantum Wells: Comparison Between Experimental and Theoretical Studies

Low temperature photoluminescence properties of InGaN films grown on (01(1)over-bar2) Al2O3 and (0001) Al2O3 substrates by low pressure MOVPE

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Optical Properties and Exciton Localization in Ganas/Gaas

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

Photoluminescence study of GaN film grown by ammoniating Ga2O3/Al2O3 deposited on Si(111) substrate

Photoluminescence of N‐inn with Low Electron Concentrations

Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A1(LO) and E2(high) Phonons in a GaInN/GaN Heterostructure

Spontaneous Emission Mechanisms of Ga in As N ∕ Ga As Quantum Dot Systems

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

Study On The Subband Properties Of Alxga1-X/Gan Modulation-Doped Heterostructures

Optical Study of Localized and Delocalized States in Gaasn/Gaas

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells