Abstract:Cathodoluminescence (CL) and time-resolved photoluminescence (TRPL) spectroscopy were used to investigate the relation between the surface morphology and emission efficiency in 10× InGaN(3nm)∕GaN(4nm) quantum wells (QWs) deposited by plasma-assisted molecular beam epitaxy (MBE). For this study, two QWs with peak emission around 405nm but grown on different surface morphologies have been investigated. A strong increase in the emission efficiency was observed in the QWs grown on {10-1m} faceted surface GaN template (m>2) as compared to those grown on an atomically smooth template. CL mapping and temperature-dependent PL studies revealed that the QWs grown on the faceted surface GaN epilayer exhibit much stronger in-plane indium content fluctuations and larger width PL peak in the temperature range of 8–300K. We found that the use of {10-1m} faceted surface GaN template resulted in strong potential profile fluctuations (PPFs) inducing different localization centers at different energy levels. We found that the deeper the corresponding fluctuation of the energy level, the weaker the decrease of the PL intensity with increasing temperature, the higher the PL decay time (τPL) in the whole temperature range and the slower the collapse of τPL. Our results demonstrate that the use of {10-1m} faceted surface morphology GaN template is an amplifying process of the PPFs which favors a regime dominated by the recombination of localized carriers.

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

Time-resolved and Temperature-Varied Photoluminescence Studies of InGaN/GaN Multiple Quantum Well Structures

Spontaneous Emission Mechanisms of Ga in As N ∕ Ga As Quantum Dot Systems

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

Photoluminescence and Absorption in InGaN Films with InN Segregation

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Thermal Quenching Of Luminescence From Buried And Surface Ingaas Self-Assembled Quantum Dots With High Sheet Density

Time-resolved Photoluminescence Characterization of InGaN/GaN Quantum Wells

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

Photovoltage and Photoreflectance Spectroscopy of Inas/Gaas Self-Organized Quantum Dots

Localized Exciton Dynamics in AlInGaN Alloy

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer

Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy

Temperature Dependent Growth of InGaN/GaN Single Quantum Well

Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template

Study of Photoluminescence and Absorption in Phase-Separation InGaN Films

Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires

Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method

Optical Properties and Exciton Localization in Ganas/Gaas