Temperature Dependence of the Photoluminescence Properties and the Research on the Mechanism of In0.2Ga0.8As/GaAs Single Quantum Well
WEI Guo-hua,WANG Bin,LI Jun-mei,CAO Xue-wei,ZHANG Cun-zhou,XU Xiao-xuan
2010-01-01
Chinese Journal of Luminescence
Abstract:The technique of photoluminescence(PL) spectra is an important method for studying the properties of semiconductors and quantum wells since its high sensitiveness,convenience and non-destructive.This technique was used to study the single quantum well(QW) of In0.2Ga0.8As/GaAs in this paper.Different PL spectra were reported under different temperature,which ranged from 125 K to 260 K for a certain sample,and the PL spectra of the samples with different quantum well width were also reported.The paper reported that,for a certain sample,the peak of its PL spectra moved towards long wavelengh ranges with the temperature increa-sing,which means that the band gap of the SQW becomes narrower.Detail consideration suggested that this property was able to be described by the equation of Varshni for the bulk materials.So,the SQW is similar to its bulk material at this point.This was mainly because within certain thickness of SQW,there was no lattice misfit dislocation,and the fundamental structure of the energy gap will not change.It was also reported that,at certain temperature,the narrower was the SQW,the wider was its band gap.We performed a brief calculation by solve Schrdinger equation,and found that the experimental result fitted to the theoretical calculation.The relationship between full width at half maximum(FWHM) of PL peak and temperature of a certain sample and the relationship between(FWHM) and SQW width of different samples were also reported,at the same time,theoretical explanation was presented for these phenomenon.