Abstract:InAs quantum dots (QD) made by self-assembled growth naturally have a random spatial and large spectral distribution. However the spatial and spectral profile of an optical cavity mode are highly predictable. To achieve the maximum interaction of single QD spontaneous emission (SE) with a cavity mode, QDs should ideally be spatially located in the cavity mode, but well isolated from nearby nonradiative surface recombination. To solve this issue, we have developed a patterned regrowth technique to place QDs near the antinode of a cavity mode. We show that the regrowth process does not affect the QDs optical properties while maintaining reasonable cavity quality factors. The PL signature of our QDs is discussed. We identify the single excitons, charged excitons and bi-excitions. Their relative intensities are decided by the excessive energy of free carriers and tunable by the sample temperature. In our research, we see strong evidence of disk sizing effect, which provide additional method to control the QD density besides material deposition and growth temperature. With this additional tunability, the QD density can be adjusted to produce low numbers of QDs (1 similar to 3 dots) per disk, so the optimal coupling of a single QD with a single cavity mode is quite plausible.

Temperature behavior of excitation emission in self-organized InAs quantum dots

Exciton localization and temperature stability in self‐organized InAs quantum dots

Exciton dynamics in self-organized InAs/GaAs quantum dots

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Temperature-Dependent Carrier Dynamics In Self-Assembled Ingaas Quantum Dots

Temperature Dependence of Exciton Complexes Photoluminescence Spectra in Self-Assembled Inas/Gaas Quantum Rings

Carrier Relaxation and Thermal Activation of Localized Excitons in Self-Organized InAs Multilayers Grown on GaAs Substrates.

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Spontaneous Emission Mechanisms of Ga in As N ∕ Ga As Quantum Dot Systems

Thermal Quenching Of Luminescence From Buried And Surface Ingaas Self-Assembled Quantum Dots With High Sheet Density

Photovoltage and Photoreflectance Spectroscopy of Inas/Gaas Self-Organized Quantum Dots

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

Temperature dependence of inter-dot electron-spin transfer among laterally coupled excited states in high-density InGaAs quantum dots

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

Polarization Dependence of Intraband Absorption in Self-Organized Quantum Dots

Carrier thermal escape in families of InAs/InP self-assembled quantum dots

Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot

PHOTOLUMINESCENCE STUDY OF MULTILAYER in In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As QUANTUM DOT AT VARIOUS TEMPERATURE