Abstract:Self-assembly effects in strained epitaxy have made it possible to grow high quality semiconductor dot structures. Recently several groups have shown good performance in quantum dot lasers. In particular for the In0.4Ga0.6As/GaAs quantum dot lasers differential gain of similar to 10(-14) cm(2) and modulation bandwidths of 7-8 GHz have been demonstrated [1,2].The following observations suggest that the operation of self-assembled lasers will be different from conventional semiconductor lasers in important aspects: (i) the electronic states are discrete - like those in an atomic system; (ii) the separation of the ground and excited states in the quantum dot conduction band states is larger than the optical phonon energy suggesting that processes other than optical phonon interaction are responsible for carrier thermalization and modulation; (iii) the high strain in the system suggests that simple effective mass pictures will not be accurate in describing the system.In this paper, we examine the electronic, optical and dynamic properties of self-assembled lasers. The formalism is based on an eight-band k.p model [3] and a modified rate equations for quantum dots. A Monte-Carlo simulation is also done to compare with the rate equation results.Our results will focus on the following issues: (i) the role of cavity loss and quantum dot density in determining the position of the lasing peaks (i.e whether ground state or excited state lasing will occur); (ii) the dynamic response of quantum dot lasers and the gain compression factor due to Pauli exclusion principle.

Temperature-Dependent Carrier Dynamics In Self-Assembled Ingaas Quantum Dots

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector

Ultrafast Carrier Capture and Relaxation in InGaAs Self-Organized Quantum Dots

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Temperature behavior of excitation emission in self-organized InAs quantum dots

Differential Transmission Measurement of Phonon Bottleneck in Self-Assembled Quantum Dot Intersubband Relaxation

Carrier thermal escape in families of InAs/InP self-assembled quantum dots

Effects of Photon and Thermal Coupling Mechanisms on the Characteristics of Self-Assembled Inas/Gaas Quantum Dot Lasers

Study of Rapid Carrier Capture and Relaxation in Inas/gaas Heterostructures

Exciton localization and temperature stability in self‐organized InAs quantum dots

Temperature Dependencies of Radiative and Nonradiative Carrier Lifetimes in InGaAs Quantum Well-Dots

Temperature Dependent Carrier Dynamics in Ga-Alloyed CdSe/ZnS Core–Shell Quantum Dots

Exciton dynamics in self-organized InAs/GaAs quantum dots

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

Anisotropic Photoconductivity of InGaAs Quantum Dot Chains Measured by Terahertz Pulse Spectroscopy

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Numerical Simulation of the Dynamic Response of Self-Assembled In0.4ga0.6as/Gaas Quantum Dot Lasers

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Hot Carrier Transportation Dynamics in InAs/GaAs Quantum Dot Solar Cell

Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells

Carrier Tunneling Effects on the Temperature Dependent Photoluminescence of Inas/Gaas Quantum Dot: Simulation and Experiment