Abstract:Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and temperature modulated time-resolved photoluminescence. Studying this material system is important in view of the ongoing implementation of such QDs for nano memory devices. Our set of structures contains a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow us to discern the common spectral features around the emission energy of 1.8 eV related to GaAs quantum well and GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. The distribution suggests the coexistence of momentum direct and indirect QD transitions. Moreover, based on the considerable tunability of the dots depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor (CMOS) platforms, since GaP is almost lattice-matched to Si. Finally, our analysis confirms the nature of the pumping power blue-shift of emission originating from the charged-background induced changes of the wavefunction topology.

Anisotropic Photoconductivity of InGaAs Quantum Dot Chains Measured by Terahertz Pulse Spectroscopy

High Polarization Properties of Single-Photon Emission from Anisotropic InGaAs Quantum Dots

Mid-infrared photoconductivity in InAs quantum dots

Far-infrared photoconductivity in self-organized InAs quantum dots

Ultrafast Carrier Capture and Relaxation in InGaAs Self-Organized Quantum Dots

Anisotropic ultrafast electron dynamics induced by high-field terahertz pulses in n-doped InGaAs

Temperature-Dependent Carrier Dynamics In Self-Assembled Ingaas Quantum Dots

Observation of Photo Darkening in Self Assembled Ingaas/Gaas Quantum Dots

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Carrier Dynamics in InGaAs with Embedded ErAs Nanoislands

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector

Observation of In‐plane Polarized Intersublevel Absorption in Strongly Coupled InGaAs/GaAs Self Assembled Quantum Dots

Fine structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 um

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

Morphological and optical characterization of self-assembled InAlGaAs/GaAs quantum dots

Revealing Exciton Dephasing and Transport Dynamics in Semiconductor Quantum Well - Quantum Dot Systems Using Optical 2d Fourier Transform Spectroscopy

Direct Observation of Excitonic Polaron in InAs/GaAs Quantum Dots

Temperature behavior of excitation emission in self-organized InAs quantum dots

Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 μm

Shaping InAs Quantum Dot Photoluminescence Using GaAs Nanoresonator Arrays