Abstract:We investigate the electronic structure of the InAs/InP quantum dots using an atomistic pseudopotential method and compare them to those of the InAs/GaAs QDs. We show that even though the InAs/InP and InAs/GaAs dots have the same dot material, their electronic structure differ significantly in certain aspects, especially for holes: (i) The hole levels have a much larger energy spacing in the InAs/InP dots than in the InAs/GaAs dots of corresponding size. (ii) Furthermore, in contrast with the InAs/GaAs dots, where the sizeable hole $p$, $d$ intra-shell level splitting smashes the energy level shell structure, the InAs/InP QDs have a well defined energy level shell structure with small $p$, $d$ level splitting, for holes. (iii) The fundamental exciton energies of the InAs/InP dots are calculated to be around 0.8 eV ($\sim$ 1.55 $\mu$m), about 200 meV lower than those of typical InAs/GaAs QDs, mainly due to the smaller lattice mismatch in the InAs/InP dots. (iii) The widths of the exciton $P$ shell and $D$ shell are much narrower in the InAs/InP dots than in the InAs/GaAs dots. (iv) The InAs/GaAs and InAs/InP dots have a reversed light polarization anisotropy along the [100] and [1$\bar{1}$0] directions.

Mid-infrared photoconductivity in InAs quantum dots

Far-infrared photoconductivity in self-organized InAs quantum dots

Anisotropic Photoconductivity of InGaAs Quantum Dot Chains Measured by Terahertz Pulse Spectroscopy

InAs Quantum Dots for Quantum Information Processing

Magneto-optical Properties of Self-Assembled InAs Quantum Dots for Quantum Information Processing

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

InAs/AlxGa1−xAs Quantum Dot Infrared Photodetectors with Undoped Active Region

Observation of In‐plane Polarized Intersublevel Absorption in Strongly Coupled InGaAs/GaAs Self Assembled Quantum Dots

Polarization Dependence of Intraband Absorption in Self-Organized Quantum Dots

Photovoltage and Photoreflectance Spectroscopy of Inas/Gaas Self-Organized Quantum Dots

Charged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition

Absorption Cross-Section and Related Optical Properties of Colloidal Inas Quantum Dots

Probing the Dark-Exciton States of a Single Quantum Dot Using Photocurrent Spectroscopy in a Magnetic Field

High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

Photoluminescence of a single InAs quantum dot molecule under applied electric field

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots

Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots

Characteristic Study of Inas Self-Assembled Quantum Dots on Gaas/Inp

Self-aligned charge read-out for InAs nanowire quantum dots