Abstract:The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate, we employed an engineered Ge-buffer on Si, used thermal cycle annealing, and introduced filtering layers, e.g., strained-layer superlattices, to control/reduce the threading dislocation density in the active part of the laser. In this way, a low defect density of 2.9 × 107 cm−2 could be achieved in the GaAs layer with a surface roughness of 1.01 nm. Transmission electron microscopy has been applied to study the effect of cycling, annealing, and filtering layers for blocking or bending threading-dislocation into the InAs QDs active region of the laser. In addition, the dependence of optical properties of InAs QDs on the growth temperature was also investigated. The results show that a density of 3.4 × 1010 InAs quantum dots could be grown at 450 °C, and the photoluminescence exhibits emission wavelengths of 1274 nm with a fullwidth at half-maximum (FWHM) equal to 32 nm at room temperature. The laser structure demonstrates a peak at 1.27 μm with an FWHM equal to 2.6 nm under a continuous-wave operation with a threshold current density of ∼158 A/cm2 for a 4-μm narrow-ridge width InAs QD device. This work, therefore, paves the path for a monolithic solution for photonic integrated circuits when III−V light sources (which is required for Si photonics) are grown on a Ge-platform (engineered Ge-buffer on Si) for the integration of the CMOS part with other photonic devices on the same chip in near future.

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

High Quality InAs Quantum Dots Grown on Patterned Si with a GaAs Buffer Layer.

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer

In Situ Annealing Enhancement of the Optical Properties and Laser Device Performance of InAs Quantum Dots Grown on Si Substrates.

Photoluminescence and Lasing Properties of InAs/GaAs Quantum Dots Grown by Metal-Organic Chemical Vapour Deposition

Structural and Optical Properties of Self-Assembled InAs Quantum Dots Grown on GaAs (311) A Substrate

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

InSb Quantum Dots for the Mid-Infrared Spectral Range Grown on GaAs Substrates Using Metamorphic InAs Buffer Layers

Optical And Local Current Studies On Inas/Gaas Quantum Dots

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

InAs QDs on (111)-Faceted Si (001) Hollow Substrates with Strong Emission at 1300 Nm and 1550 Nm

Efficient Exciton Transfer from in 0.35 Ga 0.65 As Template into InAs Quantum Dots Grown on GaAs (311) B Substrates

Optical and material characteristics of InAs/GaAs quantum dots

Si Delta Doping Inside InAs/GaAs Quantum Dots with Different Doping Densities

Near Infrared Broadband Emission of In0.35ga0.65as Quantum Dots on High Index Gaas Surfaces

O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

MOCVD Growth and Characterization of Multi-Stacked InAs/GaAs Quantum Dots on Misoriented Si(100) Emitting Near 1.3 Μm

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

Inas Self-Assembled Quantum Dots Grown On An Inp (311)B Substrate By Molecular Beam Epitaxy