The Epitaxial Growth and Unique Morphology of InAs Quantum Dots Embedded in a Ge Matrix
Hui Jia,Junjie Yang,Mingchu Tang,Wei Li,Pamela Jurczak,Xuezhe Yu,Taojie Zhou,Jae-seong Park,Keshuang Li,Huiwen Deng,Xueying Yu,Ang Li,Siming Chen,Alwyn Seeds,Huiyun Liu
DOI: https://doi.org/10.1088/1361-6463/ac95a3
2022-09-30
Abstract:In this work, we investigated the epitaxial growth of InAs quantum dots (QDs) on Ge substrates. By varying the growth parameters of growth temperature, deposition thickness and growth rate of InAs, a high density of 1.2 ×1011 cm-2 self-assembled InAs QDs were successfully epitaxially grown on Ge substrates by solid-source molecular beam epitaxy (MBE) and capped by Ge layers. Pyramidal- and polyhedral-shaped InAs QDs embedded in Ge matrices were revealed, which are distinct from the lens- or truncated pyramid-shape dots in InAs/GaAs or InAs/Si systems. Moreover, with 200 nm Ge capping layer, one third of the embedded QDs are found with ellipse and hexagonal nanovoids with sizes of 7 – 9 nm, which is observed for the first time for InAs QDs embedded in a Ge matrix to the best of our knowledge. These results provide a new possibility of integrating InAs QD devices on Group-IV platforms for Si photonics.