Abstract:This thesis is based on results concerning the formation of semiconductor self-assembled quantum dots. The quantum dots have been grown by metal organic vapour phase epitaxy in the Stranski-Krastanow growth mode. This growth mode is based on a strain-induced transition from two-dimensional layer-by-layer growth towards three-dimensional island growth. The resulting morphology consists of coherent, size homogene, single-crystalline islands (self-assembled quantum dots) on a thin remaining wetting layer. The samples have been extensively characterized by atomic force microscopy (AFM), photoluminescence (PL) spectroscopy, and transmission electron microscopy (TEM). The investigated materials systems are InP on GaInP(GaAs), InAs on InP, and GaInP on GaP. Experimentally it has been verified that InP island formation on GaInP(GaAs) is nucleation controlled. The areal island density increases with decreasing deposition temperature and increasing deposition rate. For a constant amount of island material, there is an inverse relationship between island density and size. A post-growth annealing period, in the order of minutes, can make density independent control of island sizes possible. By annealing, the islands decrease in height and show a blueshift in PL emission. Investigations in the materials system InAs/InP have shown that the island formation can be very sensitive to substrates and surface preparation. Detailed investigations of GaInP islands on GaP have shown that these islands have an uncommon shape with faced top islands situated on flat base regions. Energy dispersive X-ray spectroscopy (EDS) has shown that the top islands are In rich (In/Ga=3/2) and that the base regions are slightly Ga rich. Theoretical models for the island formation are presented. These are based on rate equations and have been used to calculate InP/GaInP(GaAs) island densities at varying deposition conditions. Average island sizes in the same materials system have been calculated with a materials balancing model. With this model it is also possible to estimate the deposition conditions that give rise to bimodal island size distributions. (Less)

Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Studying the Mechanism of Ordered Growth of InAs Quantum Dots on GaAs/InP

Investigation of the Epitaxial Growth of InxGa1−xAs on GaAs(001) and Extension of Two-Dimensional–three-dimensional Growth Mode Transition

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

Monte Carlo Simulation of Quantum Dots 2D-3D Growth by MBE

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

Triggering InAs/GaAs Quantum Dot nucleation and growth rate determination by in-situ modulation of surface energy

Optical properties of (In,Ga)As capped InAs quantum dots grown on [11k] substrates

Densities and Sizes of Self-assembled Quantum Dots Grown by MOVPE

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

Study on the mechanism of ordering growth InAs/InP quantum dots by introducing tensile strained GaAs layer

Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

Effect of Thin Gaas Tensile-Strained Layer on Inas Quantum Dots on Inp (001) Substrate Grown by Lp-Movpe

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

Evolution of self-assembled InAs/Gas(001) quantum dots grown by growth-interrupted molecular beam epitaxy

Ultrasmall In(Ga)As Quantum Dots Grown on Strained GaxIn1-xP Layers

Influence of the amount of InAs on InAs quantum dots on thin GaAs tensile-strained layer on (001) InP substrate