Influence of the amount of InAs on InAs quantum dots on thin GaAs tensile-strained layer on (001) InP substrate

Guotong Du,Xinqiang Wang,Mingtao Li,Zhi Jin,Jingzhi Yin,Zhengting Li,Shiyong Liu,Shuren Yang

DOI: https://doi.org/10.1109/leos.1999.813637

1999-01-01

Abstract:We study the behavior of InAs QDs on thin tensile-strained GaAs layer with different amount of InAs. The samples are grown by LP-MOCVD using TMIn, TMGa, pure AsH3 and 10% PH3 as precursors. The InP buffer layer is grown at 600 °C after the thermal etching, which is performed at 650 °C under the protection of PH3. Then about 3 nm GaAs tensile-strained layers are grown at 500 °C. Finally, 2ML InAs for S1, 4ML for S2, 6ML for S3, and 8ML for S4, are deposited at the growth rate of 0.3 ML/s. We use AFM to study the surface morphology of samples