Abstract:This study introduces the Reciprocal Space Polar Visualization (RSPV) method, a novel approach for visualizing X-ray diffraction-based reciprocal space data. RSPV allows for the precise separation of tilt and strain, facilitating their individual analysis. InSb was grown by molecular beam epitaxy (MBE) on two (001) GaAs substrates $\unicode{x2014}$ one with no misorientation (Sample A) $\unicode{x2014}$ one with 2° surface misorientation from the (001) planes (Sample B). There is a substantial lattice mismatch with the substrate and this results in the generation of defects within the InSb layer during growth. To demonstrate RSPV's effectiveness, a comprehensive comparison of surface morphology, dislocation density, strain, and tilt was conducted. RSPV revealed previously unobserved features of the (004) InSb Bragg peak, partially explained by the presence of threading dislocations and oriented abrupt steps (OASs). Surface morphologies examined by an atomic force microscope (AFM) revealed that Sample B had significantly lower root mean square (RMS) roughness. Independent estimates of threading dislocation density (TDD) using X-ray diffraction (XRD) and electron channelling contrast imaging (ECCI) confirmed that Sample B exhibited a significantly lower TDD than Sample A. XRD methods further revealed unequal amounts of $\alpha$ and $\beta$ type threading dislocations in both samples, contributing to an anisotropic Bragg peak. RSPV is shown to be a robust method for exploring 3D reciprocal space in any crystal, demonstrating that growing InSb on misoriented GaAs produced a higher-quality crystal compared to an on-orientation substrate.

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Triclinic Deformation and Anisotropic Strain Relaxation of an InAs Film on a GaAs(001) Substrate Measured by a Series of Symmetric Double Crystal X-ray Diffraction

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Novel 3D Reciprocal Space Visualization of Strain Relaxation in InSb on GaAs Substrates

High Resolution X-Ray Diffraction Study Of Bragg Peak Width In Strained Ingaas/Inalas/Inp Heterostructures

Interface Layers in In0.532ga0.468as/Inp Superlattices

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Tetragonal Distortion of Inaspsb Film Grown on Inas Substrate Studied by Rutherford Backscattering/Channeling and Synchrotron X-Ray Diffraction

Growth of GaAsInP heteromaterials and corresponding strain determination

Reduced thermal conductivity of epitaxial GaAsSb on InP due to lattice mismatch induced biaxial strain

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

In Situ Curvature Monitoring for Metal–organic Vapor Phase Epitaxy of Strain-Balanced Stacks of InGaAs/GaAsP Multiple Quantum Wells

Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films

Measuring Interface Strains At The Atomic Resolution In Depth Using X-Ray Bragg-Surface Diffraction

GSMBE growth and characterization of InxGa1 − xAsInP strained-layer MQWs in a P-i-N Configuration

X-ray Double-Crystal Characterization of the Strain Relaxation in GaAs/GaNxAs1−x/GaAs(001) Sandwiched Structures

Studies on Structural of Long Wavelength Infrared InAsSb Materials

Strain evolution and confinement effect in InAs/AlAs short-period superlattices studied by Raman spectroscopy