Abstract:InAs1-xSbx is a unique semiconductor as it possesses the lowest bandgap (Eg) of the conventional III–V materials, yielding emission out to nearly 15 μm at room temperature. As such, it is well-suited as the absorber material in long-wavelength infrared (IR) applications such as chemical sensing and large format IR imaging. However, the compositions at the longest wavelengths are significantly lattice-mismatched to conventional substrates. Overcoming this lattice-mismatch requires using thick graded buffers, and to date, little work has focused on the effect of growth conditions on the Sb-incorporation or optical quality of the longest-wavelength InAs1-xSbx materials. Here, the authors investigate the molecular beam epitaxy (MBE) growth of this potential absorber material by using solid source MBE to grow InAs1-xSbx on step-graded buffers on GaSb substrates. The authors have achieved cap-layer compositions as high as x ≈ 0.55 under various substrate temperatures (Tsub) and V/III beam equivalent pressure ratios. By using InAs1-xSbx as the grading material as well as the cap material, the authors can measure Sb-content as a function of growth conditions over many compositions. The author's results show good agreement between x and Eg compared with previous reports, obtaining T = 8 K photoluminescence (PL) emission approaching 11 μm. However, the authors also found that Sb-incorporation falls off for x > 0.2 and worsens with increasing Tsub, suggesting that Sb-incorporation rates increase with reduced adatom mobility. Additionally, the PL of the samples show improved intensity when either Tsub or V/III were increased, while cross-sectional transmission electron microscopy revealed a significant decrease in threading dislocation density with increased V/III. Ultimately, the authors found that under the proper growth conditions, optically active InAs1-xSbx with x over 0.55 can be attained, and with an optimized grading structure, could be a low-cost alternative to HgCdTe for long-wavelength infrared optoelectronics.

Reduced thermal conductivity of epitaxial GaAsSb on InP due to lattice mismatch induced biaxial strain

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Contradictory increase of critical layer thickness in InxGa1−xSb/GaAs heterostructures grown by MBE

quantum well structures grown by molecular beam epitaxy

Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Reduced Thermal Conductivity in Er-doped Epitaxial InxGa1−xSb Alloys

Study on Epitaxial Growth of High‐Quality InSb Materials

Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers

The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates

High Resolution X-Ray Diffraction Study Of Bragg Peak Width In Strained Ingaas/Inalas/Inp Heterostructures

The Behavior of Dopant Incorporation and Internal Strain in AlxGa1−xAs0.03Sb0.97 Grown by Molecular Beam Epitaxy

Thermal transport properties of GaN with biaxial strain and electron-phonon coupling

Epitaxial Growth of Lattice-Matched InSb/CdTe Heterostructures on the GaAs(111) Substrate by Molecular Beam Epitaxy

Thin InSb Films on GaAs Substrates by Molecular Beam Epitaxy

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

Strain in GaAsSb quantum well studied by X-ray diffraction and Rutherford backscattering/channeling

Molecular beam epitaxy growth and optical properties of high bismuth content GaSb 1-x Bi x thin films

Sb-incorporation in MBE-grown metamorphic InAsSb for long-wavelength infrared applications