Abstract:In recent years, GaSb-on-Si direct heteroepitaxy has been highly desirable to extend the operating wavelength range into mid-infrared and high-mobility applications, such as free-space communications, gas sensing, and hyperspectral imaging. High-quality GaSb films on Si remain challenging due to the high density of defects generated during the growth. For this purpose, epitaxial GaSb films were grown by molecular beam epitaxy on on-axis Si(001). Due to the large lattice mismatch (12.2%) between GaSb and Si, here, we proposed a radical design and growth strategy with the primary objective of achieving the annihilation of antiphase boundaries (APBs) and the reduction of threading dislocation density (TDD). Benefitting from a V-grooved Si hollow structure, we demonstrated the growth of emerging-APB-free GaSb film on Si(001) with low mosaicity. Moreover, by introducing InGaSb/GaSb dislocation filtering layers, the atomically flat surface root mean square roughness is improved to 0.34 (on Si) and 0.14 nm (on GaAs/Si). Moreover, the corresponding TDD can be reduced to 3.5 × 10 7 and 2 × 10 7 cm −2 , respectively, one order of magnitude lower than the minimum value found in the literature. These reported results are a powerful lever to improve the overall quality of epitaxial Si-based antimonide, which is of high interest for various devices and critical applications, such as laser diodes, photo-detectors, and solar cells.

Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers

Contradictory increase of critical layer thickness in InxGa1−xSb/GaAs heterostructures grown by MBE

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Lattice‐Mismatched Epitaxy of InAs on (111)A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots

quantum well structures grown by molecular beam epitaxy

A surface and interface study on the InSb/GaAs heterostructures

Epitaxial Growth of Lattice-Matched InSb/CdTe Heterostructures on the GaAs(111) Substrate by Molecular Beam Epitaxy

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

Thin InSb Films on GaAs Substrates by Molecular Beam Epitaxy

Study on Epitaxial Growth of High‐Quality InSb Materials

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A

Reduced thermal conductivity of epitaxial GaAsSb on InP due to lattice mismatch induced biaxial strain

Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers