Abstract:There has been sustained interesting in the area of band-gap III-V compound semiconductors for 3~5 μm infrared device applications.InSb is an attractive material because of its potential use for large area detector arrays,high frequency devices and magnetoresistive sonsors for position sensing.Unfortunately,InSb itself cannot be used as a substrate due to its very large parallel conduction.Semi-insulating GaAs has been widely employed as the substrate for InSb growth,because of its electrical isolation,low-cost and mechanical strength.The main obstacle to acquiring high quality InSb comes from the large lattice mismatch of 14.6%,between InSb and GaAs,which is particularly detrimental to thin films.In the experiments,obtaining high quality InSb by two-step growth process had been reported in the high mismatch systems.In this study,all the InSb epitaxial thin films were grown on SI-GaAs by VG solid source MBE.Reflection high-energy electron diffraction(RHEED) was used for in-situ monitoring InSb surface morphology,the effect of the buffer on quality of heteroepitaxial InSb films was systematically studied.Including a serious of samples,a GaAs buffer was not required,as it shows no apparent improvement for the quality of InSb.Optimized of the low-temperature(LT) layer was performed at maintaining binary growth,which in the cases was 350 ℃,and the folllowing high-temperature(HT) growth at 450 ℃.The epitaxial thin films characterization was presented and analyzed,including surface morphology,interface inspection and crystalline quality by atomic force microscopy(AFM),transmission electron microscopy(TEM) and X-ray diffraction(XRD) etc.We also described the problem between the different thickness InSb epilayer and Hall-mobility.In conclusion,high quality InSb epilayers strongly depends on LT InSb buffer layer.The InSb films were grown directly onto semi-insulating GaAs substrate,for our typical InSb samples with optimized buffer layer,room temperature DCXRD FWHM of 172″ and mobility of 64 300 cm2·V-1·s-1 at 77 K,were obtained.

Study on Epitaxial Growth of High‐Quality InSb Materials

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Thin InSb Films on GaAs Substrates by Molecular Beam Epitaxy

Studying of Buffer Effect on Quality of InSb on GaAs Substrate

Growth and Characterization of InAs 1-X Sb X with Different Sb Compositions on GaAs Substrates

Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD

A surface and interface study on the InSb/GaAs heterostructures

Channel Characteristics of InAs/AlSb Heterojunction Epitaxy: Comparative Study on Epitaxies with Different Thickness of InAs Channel and AlSb Upper Barrier

Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD

Epitaxial Growth of Lattice-Matched InSb/CdTe Heterostructures on the GaAs(111) Substrate by Molecular Beam Epitaxy

Molecular Beam Epitaxial Growth and Electronic Transport of GaInSb/GaSb (111) Quantum Wells

Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

Sb Antisite Defects in InSb Epilayers Prepared by Metalorganic Chemical Vapor Deposition

Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

Improving the quality and properties of GaInSb crystal with Al doping

Homoepitaxial and Characterization of GaSb Thin Films by Molecular Beam Epitaxy

Structure and Electrical Properties of InAs/GaInSb Superlattice Film

Epitaxial InAs Films on GaSb Substrate and Study on Optical Properties