Molecular beam epitaxy growth and optical properties of high bismuth content GaSb 1-x Bi x thin films

Li Yue,Xiren Chen,Yanchao Zhang,Fan Zhang,Lijuan Wang,Jun Shao,Shumin Wang
DOI: https://doi.org/10.1016/j.jallcom.2018.01.329
IF: 6.2
2018-01-01
Journal of Alloys and Compounds
Abstract:Epitaxial growth of GaSb1–xBix thin films on GaSb (100) substrates were studied by varying V/III ratio, growth temperatures and Bi flux using molecular beam epitaxy. It is demonstrated that reducing the V/III ratio facilitates Bi incorporation into GaSb effectively. The highest average Bi content up to 11% with locally up to 13% is achieved, confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy (TEM). X-ray diffraction and TEM show perfect crystal quality for the GaSb1–xBix film with x = 5.6%. The composition dependence room temperature photoluminescence (PL) spectra of the GaSb1–xBix alloys with 0 < x ≤ 13% are reported for the first time. The band-gap energy decreases effectively with increasing the Bi content and in the range of 1 ≤ x ≤ 5.6%, the linear decreasing rate is 37 meV/Bi%. For the highest Bi content GaSb1–xBix, the PL peak energy reaches 0.41 eV (3.0 μm), indicating that GaSb1–xBix alloy has potentials in mid-infrared optoelectronic applications.
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