Abstract:The thermoelectric transport properties of CaMg${}_{2}$Bi${}_{2}$, EuMg${}_{2}$Bi${}_{2}$, and YbMg${}_{2}$Bi${}_{2}$ were characterized between 2 and 650 K. As synthesized, the polycrystalline samples are found to have lower $p$-type carrier concentrations than single-crystalline samples of the same empirical formula. These low carrier concentration samples possess the highest mobilities yet reported for materials with the CaAl${}_{2}$Si${}_{2}$ structure type, with a mobility of $\ensuremath{\sim}$740 cm${}^{2}$/V/s observed in EuMg${}_{2}$Bi${}_{2}$ at 50 K. Despite decreases in the Seebeck coefficient ($\ensuremath{\alpha}$) and electrical resistivity ($\ensuremath{\rho}$) with increasing temperature, the power factor (${\ensuremath{\alpha}}^{2}\ensuremath{\rho}$) increases for all temperatures examined. This behavior suggests a strong asymmetry in the conduction of electrons and holes. The highest figure of merit ($zT$) is observed in YbMg${}_{2}$Bi${}_{2}$, with $zT$ approaching 0.4 at 600 K for two samples with carrier densities of approximately $2\ifmmode\times\else\texttimes\fi{}{10}^{18}$ cm${}^{\ensuremath{-}3}$ and $8\ifmmode\times\else\texttimes\fi{}{10}^{18}$ cm${}^{\ensuremath{-}3}$ at room temperature. Refinements of neutron powder diffraction data yield similar behavior for the structures of CaMg${}_{2}$Bi${}_{2}$ and YbMg${}_{2}$Bi${}_{2}$, with smooth lattice expansion and relative expansion in $c$ being $\ensuremath{\sim}$35$%$ larger than relative expansion in $a$ at 973 K. First-principles calculations reveal an increasing band gap as Bi is replaced by Sb and then As, and subsequent Boltzmann transport calculations predict an increase in $\ensuremath{\alpha}$ for a given $n$ associated with an increased effective mass as the gap opens. The magnitude and temperature dependence of $\ensuremath{\alpha}$ suggests higher $zT$ is likely to be achieved at larger carrier concentrations, roughly an order of magnitude higher than those in the current polycrystalline samples, which is also expected from the detailed calculations.

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Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

Epitaxial phases of high Bi content GaSbBi alloys

Molecular beam epitaxy growth and optical properties of high bismuth content GaSb 1-x Bi x thin films

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Electronic properties of metamorphic GaSbBi films on GaAs

Hot Carrier Photoluminescence from Strained InxGa1−xAs/GaAs Single Quantum Wells

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Carriers Transport Properties in GaInP Solar Cells Grown by Molecular Beam Epitaxy

Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi 0.4 Sb 1.6 Te 3 Film Fabricated by Molecular Beam Epitaxy

High Carrier Lifetime Insb Grown on Gaas Substrates

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Study on Epitaxial Growth of High‐Quality InSb Materials

Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2

Thermoelectric Transport Properties of CaMg2Bi2, EuMg2Bi

Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1 − x − yNxBiy alloys

Ultrafast study of carrier interaction in bismuth telluride thin film

Electronic properties of Bi-doped GaAs(001) semiconductors.

Reduced thermal conductivity of epitaxial GaAsSb on InP due to lattice mismatch induced biaxial strain

Photoluminescence properties of GaAsBi single quantum wells with 10% of Bi