Abstract:The characteristics of polarizations, including spontaneous polarization (PSP) and piezoelectric polarization (PPE) in Al0.25Ga0.75N/AlN/GaN were obtained by temperature-dependent x-ray diffraction measurements of AlN and GaN layers, and the sheet carrier density (ns) in 20-nm-thick barrier Al0.25Ga0.75N/AlN/GaN heterostructure was studied by Hall measurement at different temperatures from 300 K to 600 K. It is found that the PSP/e (∼1 × 1013 cm−2, e is the electron charge) is larger than PPE/e (∼7 × 1012 cm−2). Excluding the influence of background carrier density, the change of PSP/e with temperature is similar to that of ns, while the tendency of PPE/e is opposite. The contributions to ns change by PSP and PPE are ∼−7.3 × 1011 cm−2 and ∼1.9 × 1011 cm−2, respectively. Therefore, the total variation of PSP and PPE is ∼−5.4 × 1011 cm−2, which is close to the value ∼−5.5 × 1011 cm−2 obtained by Hall data. All these results demonstrate that the PSP is dominant in temperature-dependent properties of two-dimensional electron gas. Moreover, the reduction of PSP with increasing temperature might aggravate current collapse in high electron mobility transistors devices.

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

High Temperature Performance of GaN and AlxGa1-xN/GaN Heterostructures

High Temperature Performance of GaN and AIxGal-xN/GaN Heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Hysteresis Phenomena of the Two Dimensional Electron Gas Density in Lattice-Matched Inaln/Gan Heterostructures

Temperature-dependent Polarization Characteristics in Al0.25Ga0.75N/AlN/GaN Heterostructure

Electrical Properties of GaN-based Heterostructures Adopting InAlN/AlGaN Bilayer Barriers

High Temperature Dependence of the Density of Two-Dimensional Electron Gas in Al 0.18 Ga 0.82 N/GaN Heterostructures

Study On The Subband Properties Of Alxga1-X/Gan Modulation-Doped Heterostructures

Temperature dependence of strain in AlxGa1-xN/GaN heterostructures

High-temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures

Temperature dependence of strain in Al/sub x/Ga/sub 1-x/N/GaN heterostructures

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

Influence of Al Composition on Transport Properties of Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Observation of the Transition from Diffusive Regime to Ballistic Regime of the 2DEG Transport Property in Al Ga1−N/GaN Heterostructures

Study on the Subband Properties of AlxGa1-x N/GaN Modulation-Doped Heterostructures

Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure