Abstract:GaN-based heterostructures have been proved to be excellent candidates for high-voltage, large-power, high-frequency and high-temperature application fields, thanks to their superior material properties. To further improve the carriers' confinement, using InGaN channel layer or introducing AlGaN back barrier layer is promoted. These structures are also proved to be favorable for the robust electron mobility at high temperature. However, the reason solely rests on the longitudinal optical (LO) phonon scattering and the behind mechanism is still absent. This work compares the temperature-dependent electronic transport properties in three groups of GaN-based heterostructures, including GaN-based single heterostructure (SH) with/without AlN interlayer, GaN-based SH and double heterostructure (DH), and GaN-based DH with AlGaN or GaN channel layer. The advantageous high-temperature mobility is attributed to the enhanced LO phonon energy in heterostructures. By self-consistent calculations of the Schrödinger–Poisson equations, a close relation between the narrow electron distribution in the quantum well with the high LO phonon energy, and consequently superior mobility at high temperature is implied. The results provide a simple strategy for the optimized design of the GaN-based heterostructures outperforming at high temperature.

High Temperature Performance of GaN and AIxGal-xN/GaN Heterostructures

High Temperature Performance of GaN and AlxGa1-xN/GaN Heterostructures

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

High Temperature Dependence of the Density of Two-Dimensional Electron Gas in Al 0.18 Ga 0.82 N/GaN Heterostructures

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Analysis of the high-temperature transport property in GaN-based single and double heterostructures

High-temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures

High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Temperature dependence of strain in AlxGa1-xN/GaN heterostructures

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Hysteresis Phenomena of the Two Dimensional Electron Gas Density in Lattice-Matched Inaln/Gan Heterostructures

Electrical Properties of GaN-based Heterostructures Adopting InAlN/AlGaN Bilayer Barriers

Temperature dependence of strain in Al/sub x/Ga/sub 1-x/N/GaN heterostructures

Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure

Temperature-dependent Polarization Characteristics in Al0.25Ga0.75N/AlN/GaN Heterostructure

High Temperature Hall Effect Sensors Based On Algan/Gan Heterojunctions

Effects of the passivation of SiNx with various growth stoichiometry on the high temperature transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures