Abstract:GaN-based heterostructures have been proved to be excellent candidates for high-voltage, large-power, high-frequency and high-temperature application fields, thanks to their superior material properties. To further improve the carriers' confinement, using InGaN channel layer or introducing AlGaN back barrier layer is promoted. These structures are also proved to be favorable for the robust electron mobility at high temperature. However, the reason solely rests on the longitudinal optical (LO) phonon scattering and the behind mechanism is still absent. This work compares the temperature-dependent electronic transport properties in three groups of GaN-based heterostructures, including GaN-based single heterostructure (SH) with/without AlN interlayer, GaN-based SH and double heterostructure (DH), and GaN-based DH with AlGaN or GaN channel layer. The advantageous high-temperature mobility is attributed to the enhanced LO phonon energy in heterostructures. By self-consistent calculations of the Schrödinger–Poisson equations, a close relation between the narrow electron distribution in the quantum well with the high LO phonon energy, and consequently superior mobility at high temperature is implied. The results provide a simple strategy for the optimized design of the GaN-based heterostructures outperforming at high temperature.

Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

High Temperature Performance of GaN and AlxGa1-xN/GaN Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

High Temperature Dependence of the Density of Two-Dimensional Electron Gas in Al 0.18 Ga 0.82 N/GaN Heterostructures

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

High Temperature Performance of GaN and AIxGal-xN/GaN Heterostructures

Observation of the Transition from Diffusive Regime to Ballistic Regime of the 2DEG Transport Property in Al Ga1−N/GaN Heterostructures

Temperature-dependent Ultraviolet Raman Scattering and Anomalous Raman Phenomenon of AlGaN/GaN Heterostructure.

Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostructures by Self-Consistent Poisson–Schrödinger Calculations

Temperature dependence of strain in AlxGa1-xN/GaN heterostructures

Temperature dependence of strain in Al/sub x/Ga/sub 1-x/N/GaN heterostructures

Temperature Characterization of Raman Scattering in an AlGaN/GaN Heterostructure

Analysis of the high-temperature transport property in GaN-based single and double heterostructures

High-temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures

Hysteresis Phenomena of the Two Dimensional Electron Gas Density in Lattice-Matched Inaln/Gan Heterostructures

Effective Mass of the Two-Dimensional Electron Gas and Band Nonparabolicity in AlxGa1−xN∕GaN Heterostructures

Effect of the Inter-Subband Scattering in Modulation-Doped AlxGa1-xN/GaN Heterostructures

Modelling Temperature Dependence on AlGaN/GaN Power HEMT Device Characteristics

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices