Effective Mass of the Two-Dimensional Electron Gas and Band Nonparabolicity in AlxGa1−xN∕GaN Heterostructures

N Tang,B Shen,MJ Wang,ZJ Yang,K Xu,GY Zhang,T Lin,B Zhu,WZ Zhou,JH Chu
DOI: https://doi.org/10.1063/1.2197306
IF: 4
2006-01-01
Applied Physics Letters
Abstract:Magnetotransport study has been performed on AlxGa1−xN∕GaN heterostructures at low temperatures and high magnetic fields. Effective-mass values of the two-dimensional electron gas (2DEG) in the triangular quantum well at the heterointerfaces are obtained by analyzing the temperature-dependent Shubnikov–de Haas oscillations. It is found that the values have strong dependence on the magnetic field and the 2DEG density. Our results show that the effective mass increases 0.01m0∕T and 0.0027m0∕electron density of 1012cm−2. Such behavior is thought to be due to the conduction band nonparabolicity in GaN. The extrapolated band edge effective mass of m0*=(0.145±0.006)m0 is obtained, which is smaller than most reports that neglected the influence of the magnetic field in AlxGa1−xN∕GaN heterostructures.
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