Abstract:We study AlxGa1-xN/AlN/GaN heterostructures with a two-dimensional-electron-gas (2DEG) grown on different GaN templates using low-temperature magneto-transport measurements. Heterostructures with different Al compositions are grown by metal-organic vapor phase epitaxy (MOVPE) on three different templates; conventional undoped GaN (u-GaN), epitaxial lateral overgrown GaN (ELO-GaN), and in situ ELO-GaN using a SixNy nanomask layer (SiN-GaN). Field-dependent magneto-resistance and Hall measurements indicated that in addition to 2DEG, the overgrown heterostructures had a parallel conducting layer. The contact resistance for the parallel channels was large so that it introduced errors in the quantitative mobility spectrum analysis (QMSA) of the data. Notwithstanding complexities introduced by parallel conducting channels in mobility analysis in SiN-GaN and ELO-GaN samples, we were able to observe Shubnikov-de Haas (SdH) oscillations in all samples, which confirmed the existence of 2DEGs. To characterize the parallel channel, we repeated the transport measurements after the removal of the 2DEG by etching the heterostructure. The 2DEG carrier density values were extracted from the SdH data, whereas the zero-field 2DEG conductivity was determined by subtracting the parallel channel conductivity from the total conductivity. The resulting 2DEG mobility was significantly higher (about a factor of 2) in the ELO-GaN and SiN-GaN samples as compared to the standard control sample. The mobility enhancement is attributed to the threading dislocation reduction by both ELO techniques.

Subbands Transport of the Two-Dimensional Electron Gas in AlxGa1−xN/GaN Heterostructures

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Study On The Subband Properties Of Alxga1-X/Gan Modulation-Doped Heterostructures

Magnetotransport properties of two-dimensional electron gas in AlxGa(1-x)N/GaN heterostructures

Study on the Subband Properties of Alx Ga1-x N/GaN Modulation-Doped Heterostructures

Transport properties of the two-dimensional electron gas in A/sub x/Ga/sub 1-x/N/GaN heterostructures

Magnetotransport Properties of the Two-Dimensional Electron Gas in AlxGa1-xN/GaN Heterostructures under Illumination

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures

Magneto-transport Spectroscopy of the First and Second Two-dimensional Subbands in Al 0.25 Ga 0.75 N/GaN Quantum Point Contacts

Influence of Al Composition on Transport Properties of Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Magneto-transport Properties of MOVPE-grown Al X Ga 1-X N/AlN/GaN Heterostructures with High-Mobility Two-Dimensional Electron Gas

Magnetotransport investigation of modulation-doped AlxGa1-xN/GaN heterostructures

Effective Mass of the Two-Dimensional Electron Gas and Band Nonparabolicity in AlxGa1−xN∕GaN Heterostructures

Occupation of the Double Subbands by the Two-Dimensional Electron Gas in the Triangular Quantum Well at Al X Ga 1 − X N / G a N Heterostructures

Subband Electron Properties Of Modulation-Doped Alxga1-Xn/Gan Heterostructures With Different Barrier Thicknesses

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier