Magnetotransport properties of two-dimensional electron gas in AlxGa(1-x)N/GaN heterostructures

ZW Zheng,B Shen,T Someya,R Zhang,YS Gui,CP Jiang,ZX Ma,GZ Zheng,Y Shi,P Han,YD Zheng,Y Arakawa
2001-01-01
Abstract:High-resolution x-ray diffraction spectrun indicates that the modulation-doped Al0.22Ga0.78N/GaN heterostructures of high quality were fabricated, By means of magnetotransport measurements at low temperatures and high magnetic fields, it is found that the second subband in the triangular quantum well at the Al0.22Ga0.78N/GaN interface has been occupied by two-dimensional electron gas. The quantum scattering time related to the first subband Nus determined to be 8.4 x 10(-14)s.
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