Weak Localization and Magnetointersubband Scattering Effects in an Alxga1-Xn/Gan Two-Dimensional Electron Gas

ZJ Qiu,YS Gui,T Lin,N Dai,JH Chu,N Tang,J Lu,B Shen
DOI: https://doi.org/10.1103/physrevb.69.125335
2004-01-01
Abstract:Magnetotransport measurements have been carried out on a two-dimensional electron gas in a modulation-doped Al0.22Ga0.78N/GaN heterostructure. The weak localization and magnetointersubband scattering effects have been studied. The measurements show that the inelastic scattering time is inversely proportional to the temperature, following the prediction by weak localization theory. Furthermore, fitting the inelastic scattering time indicates an enhanced phase-breaking rate compared to the theoretical predication. At the same time, a magnetoresistance oscillation induced by intersubband scattering has also been observed. This magnetoresistance oscillation persists to a relatively high temperature in contrast to the Shubnikov-de Haas oscillation.
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