The weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas

Bo Zhu,Yong-Sheng Gui,Wen-Zheng Zhou,Li-Yan Shang,Shao-Ling Guo,Jun-Hao Chu,Jie Lü,Ning Tang,Bo Shen,Fu-Jia Zhang
DOI: https://doi.org/10.7498/aps.55.2498
2006-01-01
Abstract:The weak localization and weak antilocalization effects in the coherent scattering of two dimensional electron gas(2DEG) have been observed in Al_ 0.22 Ga_ 0.78 N/GaN heterostructures by the magneto-transport measurement. The change of magnetoresistance from positive to negative under a perpendicular low magnetic field indicates that electron spin-orbit scattering caused by crystal field exists in Al_ 0.22 Ga_ 0.78 N/GaN heterojunction. The relation between the spin-orbit scattering time and the temperature is discussed for 2DEG, the inelastic scattering time measured by experiment shows a strong temperature dependence according to T~ -1 rule, which indicates that the electron-electron scattering with small energy transfer is the dominant inelastic process.
What problem does this paper attempt to address?