Abstract:Magnetotransport study has been performed on AlxGa1-xN/GaN heterostructures at low temperatures and high magnetic fields. The magneto-intersubband scattering effect of the two-dimensional electron gas (2DEG) has been observed in the triangular quantum well at the heterointerface. It is found that the effective mass of the 2DEG have strong dependence on the magnetic field and the 2DEG density due to the conduction band nonparabolicity in GaN. The zero-field spin splitting of the 2DEG in AlxGa1-xN/GaN heterostructures has been studied. The obtained zero-field spin splitting energy is 2.5 meV, and the obtained spin-obit coupling parameter is 2.2×10-12 eVm. Meanwhile, the circular photo-galvanic effect induced by the spin-orbit interactions of the 2DEG in AlxGa1-xN/GaN heterostructures has also been investigated. The ratio of bulk inversion asymmetry and structure inversion asymmetry (SIA) terms is estimated to be about 13.2, indicating that the SIA is the dominant mechanism to induce the k-linear spin splitting of the subbands in the triangular quantum well at AlxGa1-xN/GaN heterointerfaces.

Influence of the Illumination on Weak Antilocalization in an AlxGa1−xN∕GaN Heterostructure with Strong Spin-Orbit Coupling

Influence Of The Illumination On The Spin Splitting Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Weak Antilocalization and Beating Pattern in High Electron Mobility AlxGa1−xN/GaN Two-Dimensional Electron Gas with Strong Rashba Spin-Orbit Coupling

Influence of the Illumination on the Beating Patterns in the Oscillatory Magnetoresistance in Alxga1-Xn/Gan Heterostructures

The weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas

Weak Localization and Magnetointersubband Scattering Effects in an Alxga1-Xn/Gan Two-Dimensional Electron Gas

Influence of the illumination on the subband structure and occupation in Al x Ga 1− x N/GaN heterostructures

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Influence of the illumination on the subband structure and occupation in Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N/GaN heterostructures

Magnetotransport Properties of the Two-Dimensional Electron Gas in AlxGa1-xN/GaN Heterostructures under Illumination

Weak Anti-Localization of the Two-Dimensional Electron Gas in Modulation-Doped AlxGa1−xN∕GaN Heterostructures with Two Subbands Occupation

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Oscillations of low-field magnetoresistivity of two-dimensional electron gases in Al 0.22Ga 0.78N/GaN heterostructures in a weak localization region

Room-temperature Spin-Oriented Photocurrent under Near-Infrared Irradiation and Comparison of Optical Means with Shubnikov De-Haas Measurements in AlxGa1−xN∕GaN Heterostructures

Exchange enhancement of spin-splitting in Al xGa 1-xN/GaN heterostructures in tilted magnetic fields

Beating Patterns in the Oscillatory Magnetoresistance Originatedfrom Zero-Field Spin Splitting in AlxGa1−xN∕GaN Heterostructures

Exchange Enhancement of Spin-Splitting in Al X Ga 1− X N/GaN Heterostructures in Tilted Magnetic Fields

Anti-weak localization of the two dimensional electron gas in modulation-doped AlxGa1-xN/GaN single quantum well

Zero-field Spin Splitting in AlxGa1−xN/GaN Heterostructures with Various Al Compositions

Anti-weak Localization of the Two Dimensional Electron Gas in Modulation-Doped Al/sub X/ga/sub 1-X/n/gan Single Quantum Well