Abstract:In this paper, considerable magnitude of spin splitting for the conduction subband at the Fermi energy is obtained in AlGaN quantum wells (QWs) grown along the c‐axis. We have analyzed how the magnitude of spin splitting of the first electron subband in AlGaN QWs with different sheet carrier concentration changes as a function of applied gate voltage, well width, and Al content in the barrier. It is also found that the contribution to spin splitting from Dresselhaus term is much larger than that from Rashba term, the contribution of Dresselhaus term to the total spin splitting depends greatly on the carrier concentrations, the change of well width has little effect on total spin splitting, and the magnitude of spin splitting can be greatly modulated by Al content in the barrier, gate voltage, and sheet carrier concentration. The internal polarized electric field is crucial for considerable spin splitting in III‐nitride QWs. Moreover, the magnitude of total spin splitting calculated here is comparable with other theoretical and experimental values observed in III‐nitride heterostructures.

Zero-field Spin Splitting in AlxGa1−xN/GaN Heterostructures with Various Al Compositions

Beating Patterns in the Oscillatory Magnetoresistance Originatedfrom Zero-Field Spin Splitting in AlxGa1−xN∕GaN Heterostructures

Exchange enhancement of spin-splitting in Al xGa 1-xN/GaN heterostructures in tilted magnetic fields

Exchange Enhancement of Spin-Splitting in Al X Ga 1− X N/GaN Heterostructures in Tilted Magnetic Fields

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures

Zeeman Spin Splitting of 2DEG in Al_xGa_(1-x)N/GaN Heterostructures

Abnormal Shubnikov-De Haas Oscillations of the Two-Dimensional Electron Gas in Alxga1-Xn/Gan Heterostructures in Tilted Magnetic Fields

Origin Of Split Peaks In The Oscillatory Magnetoresistance In Alxga1-Xn/Gan Heterostructures

Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Oscillatory Magnetoresistance of the Two-dimensional Electron Gas in Al[sub X]ga[sub 1−x]n∕gan Heterostructures in Tilted Magnetic Fields

Influence Of The Illumination On The Spin Splitting Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Gate Voltage and Structure Parameter Modulated Spin Splitting in AlGaN/GaN Quantum Wells

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Enhancement and Anisotropy of the Landau G Factor in Modulation-Doped Al0.22Ga0.78N/GaN Heterostructures

Rashba Spin Splitting for the First Two Subbands in Heterostructures

Comment on “spin Splitting in Modulation-Dopedalxga1−xn∕gan

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Room-temperature Spin-Oriented Photocurrent under Near-Infrared Irradiation and Comparison of Optical Means with Shubnikov De-Haas Measurements in AlxGa1−xN∕GaN Heterostructures

Electron spin-orbit splitting in InGaAs/InP quantum well studied by means of the weak antilocalization and spin-zero effects in tilted magnetic fields

Rashba and Dresselhaus Spin-Orbit Coupling in Gan-Based Heterostructures Probed by the Circular Photogalvanic Effect under Uniaxial Strain

Effect Of Doping Concentration And Barrier Thickness On Rashba Spin Splitting In Al0.5ga0.5n/Gan Heterostructures