Abstract:Rashba spin–orbit coupling (SOC) is a core issue in semiconductor spintronics, which allows the manipulation of electron spin through an electric field rather than an external magnetic field, revealing a bright prospect for advanced electronic devices with ultra-high speed and integration. Conversely, the emerging piezotronic effect is the born characteristic for many semiconductors that have a non-central symmetric structure, such as ZnO and GaN. Here, we design three heterostructure devices, based on piezoelectric p-type (CH3NH3)PbI3 single crystals and n-type wurtzite-structured ZnO thin films, to theoretically study how the piezotronic effect can effectively work on the Rashba spin–orbit coupling. Benefiting from large piezoelectric charges at the interface when a vertical strain is applied, a high concentration of two-dimensional electron gas is induced in the plane of the heterostructure, which can tune the built-in electric field at the interface and further manipulate the Rashba SOC. With the increase in pressure, both the Rashba parameter and spin splitting are found to first vanish and then increase linearly for ZnO with doping densities of 1015 and 1016 cm−3. This work provides insight for manipulating electron spins via the introduction of piezocharges, showing great application potential of the piezotronic effect in tuning spintronic devices.

Effect Of Doping Concentration And Barrier Thickness On Rashba Spin Splitting In Al0.5ga0.5n/Gan Heterostructures

Rashba Spin Splitting for the First Two Subbands in Heterostructures

Rashba and Dresselhaus Spin-Orbit Coupling in Gan-Based Heterostructures Probed by the Circular Photogalvanic Effect under Uniaxial Strain

Nonlinear Rashba Spin Splitting in Transition Metal Dichalcogenide Monolayers.

Gate Voltage and Structure Parameter Modulated Spin Splitting in AlGaN/GaN Quantum Wells

Study of Rashba Spin Splitting and Intersubband Spin-Orbit Coupling Effect in Algan/Gan Quantum Wells

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Rashba Effect in Pbte/Pbsrte Asymmetric Quantum Wells

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Spin transport study in a Rashba spin-orbit coupling system

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Influence of Doping on the Two-Dimensional Electron Gas Distribution in Algan/Gan Heterostructure Transistors

Beating Patterns in the Oscillatory Magnetoresistance Originatedfrom Zero-Field Spin Splitting in AlxGa1−xN∕GaN Heterostructures

The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111)

Zero-field Spin Splitting in AlxGa1−xN/GaN Heterostructures with Various Al Compositions

Electrical Control of Large Rashba Effect in Oxide Heterostructures

Piezotronic effect on Rashba spin–orbit coupling based on MAPbI 3 /ZnO heterostructures

Tunable interfacial Rashba spin-orbit coupling in asymmetric AlxIn1-xSb/InSb/CdTe quantum well heterostructures

Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Tunable interfacial Rashba spin-orbit coupling in asymmetric Al_xIn_1-xSb/InSb/CdTe quantum well heterostructures

Study On The Subband Properties Of Alxga1-X/Gan Modulation-Doped Heterostructures