Tunable interfacial Rashba spin-orbit coupling in asymmetric AlxIn1-xSb/InSb/CdTe quantum well heterostructures

Hanzhi Ruan,Zhenghang Zhi,Yuyang Wu,Jiuming Liu,Puyang Huang,Shan Yao,Xinqi Liu,Chenjia Tang,Qi Yao,Lu Sun,Yifan Zhang,Yujie Xiao,Renchao Che,Xufeng Kou
2024-08-19
Abstract:The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown AlxIn1-xSb/InSb/CdTe quantum well heterostructures is reported. The effective band bending provides robust two-dimensional quantum confinement, while the unidirectional built-in electric field from the asymmetric hetero-interfaces results in pronounced Rashba SOC strength. By tuning the Al concentration in the top AlxIn1-xSb barrier layer, the optimal structure with x = 0.15 shows the largest Rashba coefficient of 0.23 eV-Angstrom. and the highest low-temperature electron mobility of 4400 cm^2/Vs . Quantitative investigations of the weak anti-localization effect further confirm the dominant D'yakonov-Perel (DP) spin relaxation mechanism during charge-to-spin conversion. These findings highlight the significance of quantum well engineering in shaping magneto-resistance responses, and narrow bandgap semiconductor-based heterostructures may offer a reliable platform for energy-efficient spintronic applications.
Materials Science,Mesoscale and Nanoscale Physics
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