Abstract:Single-layer transition-metal dichalcogenides (TMDs) such as MoS2 and MoSe2 exhibit unique electronic band structures ideal for hosting many exotic spin-orbital orderings. It has been widely accepted that Rashba spin splitting (RSS) is linearly proportional to the external field in heterostructure interfaces or to the potential gradient in polar materials. Surprisingly, an extraordinary nonlinear dependence of RSS is found in semiconducting TMD monolayers under a gate field. In contrast to small and constant RSS in polar materials, the potential gradient in non-polar TMDs gradually increases with the gate bias, resulting in nonlinear RSS with a Rashba coefficient an order-of-magnitude larger than the linear one. Most strikingly, under a large gate field MoSe2 demonstrates the largest anisotropic spin splitting among all known semiconductors to our knowledge. Based on the k·p model via symmetry analysis, we identify that the third-order contributions are responsible for the large nonlinear Rashba splitting. The gate tunable spin splitting found in semiconducting pristine TMD monolayers promises future spintronics applications in that spin polarized electrons can be generated by external gating in an experimentally accessible way.

Rashba and Dresselhaus Spin-Orbit Coupling in Gan-Based Heterostructures Probed by the Circular Photogalvanic Effect under Uniaxial Strain

Nonlinear Rashba Spin Splitting in Transition Metal Dichalcogenide Monolayers.

Rashba Spin Splitting for the First Two Subbands in Heterostructures

Effect Of Doping Concentration And Barrier Thickness On Rashba Spin Splitting In Al0.5ga0.5n/Gan Heterostructures

Spin transport study in a Rashba spin-orbit coupling system

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures

Room-temperature Spin-Oriented Photocurrent under Near-Infrared Irradiation and Comparison of Optical Means with Shubnikov De-Haas Measurements in AlxGa1−xN∕GaN Heterostructures

Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

Circular Photogalvanic Effect of the Two-Dimensional Electron Gas in AlxGa1−xN∕GaN Heterostructures under Uniaxial Strain

Enhancement and Anisotropy of the Landau G Factor in Modulation-Doped Al0.22Ga0.78N/GaN Heterostructures

Zeeman Spin Splitting of 2DEG in Al_xGa_(1-x)N/GaN Heterostructures

Oscillatory Magnetoresistance of the Two-dimensional Electron Gas in Al[sub X]ga[sub 1−x]n∕gan Heterostructures in Tilted Magnetic Fields

Spin Relaxation Induced by Interfacial Effects in GaN/Al0.25Ga0.75N Heterostructures

Exchange Enhancement of Spin-Splitting in Al X Ga 1− X N/GaN Heterostructures in Tilted Magnetic Fields

Zero-field Spin Splitting in AlxGa1−xN/GaN Heterostructures with Various Al Compositions

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Exchange enhancement of spin-splitting in Al xGa 1-xN/GaN heterostructures in tilted magnetic fields

Photogalvanic Effects for Interband Absorption in AlGaN∕GaN Superlattices

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Study of Rashba Spin Splitting and Intersubband Spin-Orbit Coupling Effect in Algan/Gan Quantum Wells