Enhancement and Anisotropy of the Landau G Factor in Modulation-Doped Al0.22Ga0.78N/GaN Heterostructures

ZW Zheng,B Shen,YS Gui,ZJ Qiu,CP Jiang,N Tang,J Liu,DJ Chen,HM Zhou,R Zhang,Y Shi,YD Zheng,SL Guo,JH Chu,K Hoshino,Y Arakawa
DOI: https://doi.org/10.1063/1.1642732
IF: 2.877
2004-01-01
Journal of Applied Physics
Abstract:Spin splitting of the two-dimentional electron gas (2DEG) in modulation-doped Al0.22Ga0.78N/GaN heterostructures has been studied by means of magnetotransport measurements at low temperatures and high magnetic fields. The spin splitting is observed in Shubnikov–de Haas oscillations at a magnetic field higher than 5.4 T and a temperature of 1.4 K. The effective g factor g* is enhanced due to the exchange interaction of the 2DEG at high densities. The ratio of the transverse effective g factor g⊥* and the longitudinal effective g factor g∥* is g⊥*/g∥*=2.6 indicating the large difference between g∥* and g⊥*. It is demonstrated that the anisotropy of the g* is due to the strong polarization-induced electric field at the heterointerface.
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