Magnetotransport investigation of modulation-doped AlxGa1-xN/GaN heterostructures

Ze-Wei ZHENG,Bo SHEN,Rong ZHANG,Yong-Sheng GUI,Chun-ping JIANG,Zhi-xun MA,Guo-zhen ZHENG,Shao-ling GUO,Yi SHI,Ping HAN,You-dou ZHENG
DOI: https://doi.org/10.3969/j.issn.1007-4252.2000.04.021
2000-01-01
Abstract:Magnetoresistance of modulation-doped Al0.22Ga0.78N/GaN heterostructures has been studied by means of magnetotransport measurements at low temperatures and high magnetic fields. The double periodicity of the Shubnikov-de Hass oscillations was observed. It was found that the occupation of the first two subbands by the two-dimensional electron gas(2DEG) in the triangular quantum well at the Al0.22Ga0.78N/GaN heterointerface took place when the 2DEG sheet concentration reached 7.2×1012 cm-2. The energy separation of the first and the second subbands in the quantum well was determined to be 75 meV just before the second subband was occupied.
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