Origin Of Split Peaks In The Oscillatory Magnetoresistance In Alxga1-Xn/Gan Heterostructures
Ning Tang,Bo Shen,Kui Han,Zhijian Yang,Kewei Xu,Guoyi Zhang,Tie Lin,Beiyi Zhu,WenZheng Zhou,Liyan Shang,Shaoling Guo,Junhao Chu
DOI: https://doi.org/10.1063/1.2349561
IF: 2.877
2006-01-01
Journal of Applied Physics
Abstract:The oscillatory magnetoresistance of the two-dimensional electron gas (2DEG) in AlxGa1-xN/GaN heterostructures has been studied by means of magnetotransport measurements at low temperatures and high magnetic fields. The split peaks of the Shubnikov-de Haas oscillations are observed at high magnetic fields, which are attributed to the spin splitting of the 2DEG. It is found that the spin splitting energy becomes smaller with an increase in magnetic field, indicating that the Zeeman spin splitting is not dominant at measured magnetic field range. Within this magnetic field range, the zero-field spin splitting, as well as Zeeman spin splitting, affects the split peaks in the oscillatory magnetoresistance of the 2DEG in AlxGa1-xN/GaN heterostructures.