Abstract:This review article examines the development of GaN‐based spintronics, systematically summarizes the progress of GaN‐based semiconductors in spin injection, transport, and manipulation, explores the potential of spintronic devices, as well as discusses the challenges that need to be addressed for the integration of GaN‐based spintronic devices into mainstream microelectronic platforms. Spintronics, exploiting the spin degree of electrons as the information vector, is an attractive field for implementing the beyond‐complementary metal‐oxide‐semiconductor (CMOS) devices. GaN‐based semiconductors, characterized by weak spin‐orbit coupling, long spin relaxation time, and Curie temperature higher than room temperature, are considered ideal materials for advancing spintronics. In addition, GaN‐based semiconductors possess a variety of heterostructures, and different properties can be combined through energy band engineering, this enables addressing the limitation of GaN‐based semiconductors. Nevertheless, there are still challenges in practical applications; for instance, the mechanism of spin relaxation in GaN‐based semiconductors is still unclear, and efficient spin gating has not yet been realized. This review examines the progress of spintronics in GaN‐based semiconductors, and systematically summarizes the advancements in spin injection, transport, manipulation, and device application. The current challenges and future perspectives on the studies of spintronic devices based on GaN‐based semiconductors are also highlighted.

Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Zeeman Spin Splitting of 2DEG in Al_xGa_(1-x)N/GaN Heterostructures

Spin Injection, Relaxation, and Manipulation in GaN-based Semiconductors

Zero-field Spin Splitting in AlxGa1−xN/GaN Heterostructures with Various Al Compositions

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Exchange Enhancement of Spin-Splitting in Al X Ga 1− X N/GaN Heterostructures in Tilted Magnetic Fields

Spin Valve Effect in CrN/GaN Van Der Waals Heterostructures

Beating Patterns in the Oscillatory Magnetoresistance Originatedfrom Zero-Field Spin Splitting in AlxGa1−xN∕GaN Heterostructures

Exchange enhancement of spin-splitting in Al xGa 1-xN/GaN heterostructures in tilted magnetic fields

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Oscillatory Magnetoresistance of the Two-dimensional Electron Gas in Al[sub X]ga[sub 1−x]n∕gan Heterostructures in Tilted Magnetic Fields

Spin Relaxation Induced by Interfacial Effects in GaN/Al0.25Ga0.75N Heterostructures

Quantum Transport and Spin Properties of the Carriers in Ⅲ-nitride Heterostructures

Spin Valve Effect in VN/GaN/VN Van Der Waals Heterostructures

Transport properties of the two-dimensional electron gas in A/sub x/Ga/sub 1-x/N/GaN heterostructures

Weak Antilocalization and Beating Pattern in High Electron Mobility AlxGa1−xN/GaN Two-Dimensional Electron Gas with Strong Rashba Spin-Orbit Coupling

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces

Influence Of The Illumination On The Spin Splitting Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Spintronics in GaN‐Based Semiconductors: Research Progress, Challenges and Perspectives