Spin Injection, Relaxation, and Manipulation in GaN-based Semiconductors

Zhang ShiXiong,Tang Ning,Sun ZhenHao,Chen ShuaiYu,Shen Bo

DOI: https://doi.org/10.1080/23746149.2022.2158757

2023-01-01

Abstract:GaN-based semiconductors are deemed to be a potential candidate for developing spintronic devices owing to the artificially controllable spin-orbit coupling and the high Curie temperature of GaN-based diluted magnetic semiconductors. Spin injection, spin relaxation dynamics, and spin manipulation are the key issues in the development of GaN-based spintronic devices, which have been reviewed in this article. In the end, a brief section presents the research progress of GaN-based spintronic devices.