Use of Jebsen Taylor Hand Function Test in evaluating the hand dexterity in people with Parkinson's disease.

M. Mak,Edmund Lau,V. Tam,C. Woo,S. Yuen

DOI: https://doi.org/10.1016/j.jht.2015.05.002

IF: 1.908

2015-10-01

Journal of Hand Therapy

Abstract:

What problem does this paper attempt to address?

High-efficient spin injection in GaN through a lattice-matched tunnel layer

Mingyu Chen,Shiming Huang,Wei Jiang,Qipeng Wu,Peng Tan,Chenhao Zhang,Deyi Fu,Xu Li,Zhiming Wu,Yaping Wu,Rong Zhang,Junyong Kang

DOI: https://doi.org/10.1063/5.0194999

IF: 4

2024-06-10

Applied Physics Letters

Abstract:Semiconductor spintronics has brought about revolutionary application prospects in future electronic devices. The tunnel junction plays a key role in achieving efficient spin injection in semiconductors. This work employed the GaN semiconductor as a room-temperature spin injection system, taking advantage of its weak spin–orbit coupling and spin scattering. By introducing a lattice-matched AlN barrier layer to improve the tunneling interface, advanced spin injection and transport were realized compared with traditional oxide barriers. The spin polarization was further improved by modulating the applied bias, and a bias-controlled tunneling enhancement mechanism was revealed. Consequently, we demonstrated a high record of spin polarization of 20.5%. This work paves a feasible route for achieving efficient spin injection and transport in GaN, which will further promote the development of room-temperature and high-performance spintronic devices.

physics, applied
Modulating Room Temperature Spin Injection into GaN Towards the High-Efficiency Spin-Light Emitting Diodes

Anke Song,Jiajun Chen,Jinshen Lan,Deyi Fu,Jiangpeng Zhou,Zhibai Zhong,Jian Guo,Xuefeng Wu,Yaping Wu,Xu Li,Shengli Huang,Zhiming Wu,Junyong Kang

DOI: https://doi.org/10.35848/1882-0786/ab810b

IF: 2.819

2020-01-01

Applied Physics Express

Abstract:Spin injection performance in GaN film was systematically investigated through the three-terminal Hanle spin precession measurements with the comparison of varied tunnel barrier thickness, spin injector materials, and channel widths. Spin relaxation time and diffusion length were optimized to 37.3 ps and 139.0 nm at room temperature, respectively. With the optimal spin injector, a 12% spin polarization was obtained in a four-terminal non-local spin valve device. By applying the optimized spin injector structure to the spin-light emitting diodes, room temperature circular polarization ratios of 6.2% and 9.2% for Co and Fe spin polarizers were respectively achieved at surface-emission.
Spin Injection into Heavily-Doped N-Gan Via Schottky Barrier

Zhenhao Sun,Ning Tang,Shuaiyu Chen,Fan Zhang,Haoran Fan,Shixiong Zhang,Rongxin Wang,Xi Lin,Jianping Liu,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1088/1674-4926/44/8/082501

2023-01-01

Journal of Semiconductors

Abstract:Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures.A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts.The spin injec-tion efficiency of 21％was achieved at 1.7 K.It was confirmed that the thin Schottky barrier formed between the heavily n-doped GaN and Co was conducive to the direct spin tunneling,by reducing the spin scattering relaxation through the inter-face states.
Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Xiangyu Zeng,Liang Zhang,Yang Zhang,Fazhi Yang,Liqin Zhou,Yong Wang,Cizhe Fang,Xiaoxi Li,Siying Zheng,Yang Liu,Yan Liu,Xiaozhi Wang,Yue Hao,Genquan Han

DOI: https://doi.org/10.1063/5.0215304

IF: 4

2024-01-01

Applied Physics Letters

Abstract:Spintronic devices are regarded as prime candidates for addressing the demands of emergent applications such as in-memory computing and the Internet of Things, characterized by requirements for high speed, low energy consumption, and elevated storage density. Among these, spin valves, serving as fundamental structures of magnetic random-access memory, have garnered substantial attention in recent years. This study introduces an all van der Waals (vdW) heterostructure composed of Fe3GeTe2 (FGT)/tellurene/FGT, wherein a thin layer of Weyl semiconductor Te is interposed between two ferromagnetic FGT layers. The proposed configuration exhibits a characteristic spin valve effect at temperatures below 160 K. This effect is attributed to spin-dependent transport and spin-dependent scattering phenomena occurring at the interfaces of the constituent materials. Furthermore, as temperature decreases, the magnetoresistance ratio (MR) of the device increases, indicative of the heightened polarization ratio of FGT, with an MR of 0.43% achievable as the temperature approaches 5 K. This investigation elucidates the underlying operational mechanisms of two-dimensional spin valve devices and lays the groundwork for the realization of spin-based integrated circuits.
Spin Injection, Relaxation, and Manipulation in GaN-based Semiconductors

Zhang ShiXiong,Tang Ning,Sun ZhenHao,Chen ShuaiYu,Shen Bo

DOI: https://doi.org/10.1080/23746149.2022.2158757

2023-01-01

Abstract:GaN-based semiconductors are deemed to be a potential candidate for developing spintronic devices owing to the artificially controllable spin-orbit coupling and the high Curie temperature of GaN-based diluted magnetic semiconductors. Spin injection, spin relaxation dynamics, and spin manipulation are the key issues in the development of GaN-based spintronic devices, which have been reviewed in this article. In the end, a brief section presents the research progress of GaN-based spintronic devices.
Spintronics in GaN‐Based Semiconductors: Research Progress, Challenges and Perspectives

Hangtian Li,Miaodong Zhu,Zhonghong Guo,Guoxin Li,Jianbo Shang,Ying Yang,Yikang Feng,Yunshu Lu,Qian Zhang,Sheng Wang,Zexi Li,Qinglong Jiang,Xiaowei Lin,Fangliang Gao,Shuti Li

DOI: https://doi.org/10.1002/admt.202401017

IF: 6.8

2024-11-08

Advanced Materials Technologies

Abstract:This review article examines the development of GaN‐based spintronics, systematically summarizes the progress of GaN‐based semiconductors in spin injection, transport, and manipulation, explores the potential of spintronic devices, as well as discusses the challenges that need to be addressed for the integration of GaN‐based spintronic devices into mainstream microelectronic platforms. Spintronics, exploiting the spin degree of electrons as the information vector, is an attractive field for implementing the beyond‐complementary metal‐oxide‐semiconductor (CMOS) devices. GaN‐based semiconductors, characterized by weak spin‐orbit coupling, long spin relaxation time, and Curie temperature higher than room temperature, are considered ideal materials for advancing spintronics. In addition, GaN‐based semiconductors possess a variety of heterostructures, and different properties can be combined through energy band engineering, this enables addressing the limitation of GaN‐based semiconductors. Nevertheless, there are still challenges in practical applications; for instance, the mechanism of spin relaxation in GaN‐based semiconductors is still unclear, and efficient spin gating has not yet been realized. This review examines the progress of spintronics in GaN‐based semiconductors, and systematically summarizes the advancements in spin injection, transport, manipulation, and device application. The current challenges and future perspectives on the studies of spintronic devices based on GaN‐based semiconductors are also highlighted.

materials science, multidisciplinary
Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Xiaoyue Zhang,Ning Tang,Liuyun Yang,Chi Fang,Caihua Wan,Xingchen Liu,Shixiong Zhang,Yunfan Zhang,Xinqiang Wang,Yuan Lu,Weikun Ge,Xiufeng Han,Bo Shen

DOI: https://doi.org/10.1002/adfm.202009771

IF: 19

2021-02-09

Advanced Functional Materials

Abstract:<p>The spin injection into 2D electron gas (2DEG) in AlN/GaN heterostructures is studied by magneto‐transport measurements. An ultrathin AlN layer at the hetero‐interface acts as a barrier to form high‐quality 2DEG in the triangular quantum well and a tunneling barrier for the spin injection to overcome the conductance mismatch issue. In this study, Hanle signals and inversed Hanle signals are observed, proving that the spin injection is achieved in the 2DEG in the AlN/GaN heterostructure rather than in the interfacial states. The spin‐relaxation time in 2DEG at 8 K is found to be as long as 860 ps, which almost keeps constant with bias and decreases with increasing temperature. The spin‐relaxation process is illustrated as Rashba spin‐orbit coupling dominated D'yakonov Perel' mechanisms above 8 K. These results show the promising potential of 2DEG in AlN/GaN heterostructures for spin field‐effect transistor applications.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Lateral spin injection and detection through electrodeposited Fe/GaAs contacts

Sarmita Majumder,Bartek Kardasz,George Kirczenow,Anthony SpringThorpe,Karen L. Kavanagh

DOI: https://doi.org/10.1088/0268-1242/28/3/035003

2012-12-03

Abstract:Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report experimental studies of lateral spin injection and detection through electrodeposited Fe/GaAs tunnel contacts. We demonstrate spin injection efficiencies two orders of magnitude higher than for state-of-the-art contacts fabricated via ultra-high-vacuum methods, including those with MgO or Al2O3 tunnel barriers. To account for this enhancement, we propose that an iron oxide layer that forms at the Fe/GaAs interface during electrodeposition, being magnetic, acts as a tunnel barrier with a spin-dependent height, presenting quantum spin transport calculations for such systems. This serendipitous discovery of greatly enhanced efficiency of spin injection into GaAs via electrodeposited contacts introduces a promising new direction for the development of practical semiconductor spintronic devices.

Mesoscale and Nanoscale Physics
Spin Valve Effect in VN/GaN/VN Van Der Waals Heterostructures

Haoshen Ye,Yijie Zhu,Dongmei Bai,Junting Zhang,Xiaoshan Wu,Jianli Wang

DOI: https://doi.org/10.1103/physrevb.103.035423

IF: 3.7

2021-01-01

Physical Review B

Abstract:Nitride-based van der Waals magnetic heterostructures can simultaneously utilize both charge and spin degrees of electrons, which are important materials for low-dimensional spintronic devices. In this work, we study the stabilities and the electronic and magnetic properties of GaN/VN and VN/GaN/VN van der Waals heterostructures via first-principles calculations. The GaN/VN van der Waals heterostructure is a half-metal with 100% spin polarization, which can be applied in a spin filter and spin injection. Although monolayer GaN is a nonmagnetic semiconductor, it can introduce half-metallic characters via the magnetic proximity effect in both GaN/VN and VN/GaN/VN van der Waals heterostructures. The easy magnetization axis of hexagonal VN transits from the out-of-plane to the in-plane direction after combining with hexagonal GaN due to the different orbital occupations. Moreover, the electronic properties of the VN/GaN/VN van der Waals heterostructure depend largely on the magnetic configurations of the VN layers. By applying parallel or antiparallel magnetic configurations, the VN/GaN/VN van der Waals heterostructure presents half-metallic and semiconducting characters. The transformation indicates that the VN/GaN/VN van der Waals heterostructure is a promising candidate for room-temperature van der Waals spin valve devices.
Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures

Qianqian Wu,Jin Wang,Ting Zhi,Yanling Zhuang,Zhikuo Tao,Pengfei Shao,Qing Cai,Guofeng Yang,Junjun Xue,Dunjun Chen,Rong Zhang

DOI: https://doi.org/10.1088/1361-6528/ad3d64

IF: 3.5

2024-04-13

Nanotechnology

Abstract:The pursuit of van der Waals (vdW) heterostructures with high Curie temperature and strong perpendicular magnetic anisotropy is vital to the advancement of next generation spintronic devices. First-principles calculations are used to study the electronic structures and magnetic characteristics of GaN/VS 2 vdW heterostructure under biaxial strain and electrostatic doping. Our findings show that a ferromagnetic ground state with a remarkable Curie temperature (477 K), much above room temperature, exists in GaN/VS 2 vdW heterostructure and 100% spin polarization efficiency. Additionally, GaN/VS 2 vdW heterostructure still maintains perpendicular magnetic anisotropy under biaxial strain, which is indispensable for high-density information storage. We further explore the electron, magnetic, and transport properties of VS 2 /GaN/VS 2 vdW sandwich heterostructure, where the magnetoresistivity can reach as high as 40%. Our research indicates that the heterostructure constructed by combining the ferromagnet VS 2 and the non-magnetic semiconductor GaN is a promising material for vdW spin valve devices at room temperature.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Spin Valve Effect in CrN/GaN Van Der Waals Heterostructures

Junjun Xue,Wei Chen,Tao,Ting Zhi,Pengfei Shao,Qing Cai,Guofeng Yang,Jin Wang,Dunjun Chen,Rong Zhang

DOI: https://doi.org/10.1063/5.0165709

IF: 2.877

2023-01-01

Journal of Applied Physics

Abstract:In the pursuit of developing high-performance low-dimensional spintronic devices, two-dimensional van der Waals heterostructures comprising non-magnetic nitride and ferromagnetic materials have emerged as a crucial area of investigation. This paper proposes a novel structure that employs hexagonal two-dimensional semiconductor GaN flanked by two half-metallic two-dimensional CrN layers. The stability of the proposed structure is verified via first-principles calculations, which indicate good thermodynamic and magnetic stability. The transport characteristics of electrons in the structure are analyzed through the Band structures and density of states. Specifically, the study examines the spin polarizability of parallel and anti-parallel magnetic configurations of the CrN/GaN/CrN vdW heterostructure, and the results demonstrate a significant spin valve effect. Overall, the study establishes the potential of the CrN/GaN/CrN vdW heterostructure as a candidate for the development of innovative spintronic devices.
Generating Strong Electron Spin Polarization at Room Temperature in GaNAs Via Spin-Dependent Recombination

Xingjun Wang,I. A. Buyanova,Weimin Chen,Feixiang Zhao,Delphine Lagarde,Andréa Balocchi,X. Marie,Young Bin Hong,C. W. Tu,J.C. Harmand

2008-01-01

Abstract:The issues of generating and maintaining carrier spin polarization in semiconductors have attracted intense research efforts, not only due to their importance for future applications in spintronics but also due to the intriguing physics underpinning spin-dependent phenomena. Entering the family of semiconductors that exhibit attractive spin-dependent properties, Ga(In)NAs was most recently found to exhibit strong spin polarization of conducting electrons at room temperature upon N incorporation with an extremely long apparent spin lifetime. In this work we have uncovered the origin of the astonishing effect as being due to strong spin dependent recombination (SDR) via defects, by a combination of optical orientation and optically detected magnetic resonance (ODMR) studies. We were able to identify Ga self-interstitials and an As antisite complex to be the dominant defects participating in the SDR process. The involvement of these defects were unambiguously established by their unique spin-resonance signatures derived from the hyperfine interaction between the localized unpaired electron spin and nuclear spins (I=3/2) of the As and Ga atom - the core of the defects. These defects dominate in carrier capture and recombination leading to the observed strong dynamic polarization of electron spins. Further confirmation was found by the effects of growth conditions and post-growth treatments on the defect density that were closely correlated with the electron spin polarization.
Efficient spin injection into graphene through a tunnel barrier: overcoming the spin conductance mismatch

Qingyun Wu,Lei Shen,Zhaoqiang Bai,Minggang Zeng,Ming Yang,Zhigao Huang,Yuan Ping Feng

DOI: https://doi.org/10.48550/arXiv.1411.0779

2014-11-04

Materials Science

Abstract:Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of barriers, h-BN, Cu(111), and graphite, of various thickness (0-3 layers) are considered and the electrically biased conductance of the Ni/Barrier/Graphene junction are calculated. It is found that the minority spin transport channel of graphene can be strongly suppressed by the insulating h-BN barrier, resulting in a high spin injection efficiency. On the other hand, the calculated spin injection efficiencies of Ni/Cu/Graphene and Ni/Graphite/Graphene junctions are low, due to the spin conductance mismatch. Further examination on the electronic structure of the system reveals that the high spin injection efficiency in the presence of a tunnel barrier is due to its asymmetric effects on the two spin states of graphene.
Engineering of Tunnel Junctions for Prospective Spin Injection in Germanium

Yi Zhou,Masaaki Ogawa,Mingqiang Bao,Wei Han,Roland K. Kawakami,Kang L. Wang

DOI: https://doi.org/10.1063/1.3157128

IF: 4

2009-01-01

Applied Physics Letters

Abstract:Even though the strong Fermi-level pinning at the metal/germanium (Ge) interface can be alleviated by inserting a thin layer of tunneling oxide, the still sizeable Schottky barriers and the wide depletion regions of the Fe/oxide/n-Ge contacts make the junction resistances strongly dependent of temperature. The resistance-area (RA) products of these junctions are too high for spin injection and cannot be tuned by simply varying oxide thickness or using ferromagnetic metal (FM) with a lower work function. In this work, low energy ion implantation and rapid thermal annealing were utilized to degenerately dope the Ge surface layer to facilitate single-step tunneling transport. The RA products of the junctions with surface doping are significantly reduced and weakly dependent of temperature. This method gives a prospect for spin injection to Ge from FM.
Spin Relaxation Induced by Interfacial Effects in N-Gan/mgo/co Spin Injectors

Xingchen Liu,Ning Tang,Chi Fang,Caihua Wan,Shixiong Zhang,Xiaoyue Zhang,Hongming Guan,Yunfan Zhang,Xuan Qian,Yang Ji,Weikun Ge,Xiufeng Han,Bo Shen

DOI: https://doi.org/10.1039/d0ra00464b

IF: 4.036

2020-01-01

RSC Advances

Abstract:Spin relaxation, affected by interfacial effects, is a critical process for electrical spin injection and transport in semiconductor-based spintronics. In this work, the electrical spin injection into n-GaN via n-GaN/MgO/Co tunnel barrier was realized, and the interface-related spin relaxation was investigated by both electrical Hanle effect measurement and time-resolved Kerr rotation (TRKR) spectrum. It was found that the spin relaxation caused by interfacial random magnetostatic field was nearly equal to the intrinsic contributions at low temperature (less than 80 K) and could be suppressed by smoother n-GaN/Co interface. When the interfacial random magnetostatic field was suppressed, the spin relaxation time extracted from the electrical injection process was still shorter than that in bulk conduction band, which was attributed to Rashba spin-orbit coupling (SOC) induced by the interface band bending in the depletion region. Due to thermal activation, luckily, the spin relaxation induced by the interfacial Rashba SOC was suppressed at temperatures higher than 50 K. These results illustrate that (1) spin relaxation time could be as long as 300 ps for GaN and (2) the influences of interfacial effects could be engineered to further prolong spin relaxation time, both of which shed lights on GaN-based spintronic devices with direct and wide bandgap.
Significant enhancement of magnetic anisotropy and conductivity in GaN / CrI 3 van der Waals heterostructures via electrostatic doping

Haoshen Ye,Xiao Wang,Dongmei Bai,Junting Zhang,Xiaoshan Wu,G. P. Zhang,Jianli Wang

DOI: https://doi.org/10.1103/physrevb.104.075433

IF: 3.7

2021-08-18

Physical Review B

Abstract:van der Waals magnetic heterostructures, consisting of a wide band-gap nitride semiconductor and an intrinsic ferromagnetic semiconductor, are potentially useful for low-dimensional spintronic field-effect transistors. However, there is a significant challenge. For instance, the integration often leads to a decreased Curie temperature, the magnetic anisotropy direction change, and low conductivities. Here, we employ the first-principles density-functional method to systematically investigate the electronic and magnetic properties of the GaN/CrI3 van der Waals heterostructures under electrostatic doping. Though the easy magnetization axis of the monolayer CrI3 transforms from out-of-plane to in-plane direction over 0.2 electron doping per unit cell, the GaN/CrI3 van der Waals heterostructure maintains perpendicular anisotropy under electron doping, crucial for high-density information storage. The Curie temperature of the GaN/CrI3 van der Waals heterostructure can be enhanced under both electron and hole doping. The GaN/CrI3 van der Waals heterostructure presents half-metallic properties and the spin-up conductivities are much larger than that of the monolayer CrI3 under the same electrostatic doping. Our results indicate that constructing heterostructures with ferromagnets and nonmagnetic semiconductors is an effective strategy for developing high-performance field-effect transistors.

physics, condensed matter, applied,materials science, multidisciplinary
Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

André Dankert,Ravi S. Dulal,Saroj P. Dash

DOI: https://doi.org/10.1038/srep03196

2014-03-12

Abstract:Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type and 10% in p-type degenerate Si bands, using a narrow Schottky and a SiO2 tunnel barrier in a direct tunneling regime. Furthermore, by increasing the width of the Schottky barrier in non-degenerate p-type Si, we observed a systematic sign reversal of the Hanle signal in the low bias regime. This dramatic change in the spin injection and detection processes with increased Schottky barrier resistance may be due to a decoupling of the spins in the interface states from the bulk band of Si, yielding a transition from a direct to a localized state assisted tunneling. Our study provides a deeper insight into the spin transport phenomenon, which should be considered for electrical spin injection into any semiconductor.

Materials Science,Quantum Physics
Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Tang Ning,Shen Bo,Han Kui

2009-01-01

Abstract:Owing to the advantages of long spin relaxation time and high Curie temperature,Ⅲ-nitride semiconductor material is one of the most favorite materials in developing spintronic devices.Two main physical effects are introduced to study spin properties of the two-dimensional electron gas in Al_xGa_(1-x)N/GaN heterostructures,including beating pattern Shubnikov-de Haas oscillations and weak-antilocalization effect.The development of the spin properties of the 2DEG in Al_xGa_(1-x)N/GaN heterostructures is reviewed.Due to the large polarization-induced field in Al_xGa_(1-x)N/GaN heterostructures,a 2DEG with large sheet carrier concentration can be obtained.The spin splitting energy of the 2DEG is very large in Al_xGa_(1-x)N/GaN heterostructures.The spin splitting can also be controlled by the gate voltage.Thus it has good application prospects in spin field effect transistors.However,the spin injection efficiency in GaN is still a major problem which hinders the devolopment of GaN-based spintronic devices.
Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature

Xingchen Liu,Ning Tang,Shixiong Zhang,Xiaoyue Zhang,Hongming Guan,Yunfan Zhang,Xuan Qian,Yang Ji,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1002/advs.201903400

IF: 15.1

2020-01-01

Advanced Science

Abstract:III-nitride wide bandgap semiconductors are favorable materials for developing room temperature spintronic devices. The effective manipulation of spin dynamics is a critical request to realize spin field-effect transistor (FET). In this work, the dependence of the spin relaxation time on external strain-induced polarization electric field is investigated in InGaN/GaN multiple quantum wells (MQWs) by time-resolved Kerr rotation spectroscopy. Owing to the almost canceled two different spin-orbit coupling (SOC), the spin relaxation time as long as 311 ps in the MQWs is obtained at room temperature, being much longer than that in bulk GaN. Furthermore, upon applying an external uniaxial strain, the spin relaxation time decreases sensitively, which originates from the breaking of the SU(2) symmetry. The extracted ratio of the SOC coefficients shows a linear dependence on the external strain, confirming the essential role of the polarization electric field. This effective manipulation of the spin relaxation time sheds light on GaN-based nonballistic spin FET working at room temperature.
Highly Efficient Spin Injection and Readout Across Van Der Waals Interface.

Hao Chen,Wanghao Tian,Lishu Zhang,Peng Song,Lanxin Jia,Jingsheng Chen,Zhifeng Zhu,Yuan Ping Feng,Kian Ping Loh

DOI: https://doi.org/10.1002/smll.202403073

IF: 13.3

2024-01-01

Small

Abstract:Spin injection, transport, and detection across the interface between a ferromagnet and a spin-carrying channel are crucial for energy-efficient spin logic devices. However, interfacial conductance mismatch, spin dephasing, and inefficient spin-to-charge conversion significantly reduce the efficiency of these processes. In this study, it is demonstrated that an all van der Waals heterostructure consisting of a ferromagnet (Fe3GeTe2) and Weyl semimetal enables a large spin readout efficiency. Specifically, a nonlocal spin readout signal of 150 m Omega and a local spin readout signal of 7.8 Omega is achieved, which reach the signal level useful for practical spintronic devices. The remarkable spin readout signal is attributed to suppressed spin dephasing channels at the vdW interfaces, long spin diffusion, and efficient charge-spin interconversion in T-d-MoTe2. These findings highlight the potential of vdW heterostructures for spin Hall effect-enabled spin detection with high efficiency, opening up new possibilities for spin-orbit logic devices using vdW interfaces.

Use of Jebsen Taylor Hand Function Test in evaluating the hand dexterity in people with Parkinson's disease.

High-efficient spin injection in GaN through a lattice-matched tunnel layer

Modulating Room Temperature Spin Injection into GaN Towards the High-Efficiency Spin-Light Emitting Diodes

Spin Injection into Heavily-Doped N-Gan Via Schottky Barrier

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Spin Injection, Relaxation, and Manipulation in GaN-based Semiconductors

Spintronics in GaN‐Based Semiconductors: Research Progress, Challenges and Perspectives

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Lateral spin injection and detection through electrodeposited Fe/GaAs contacts

Spin Valve Effect in VN/GaN/VN Van Der Waals Heterostructures

Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures

Spin Valve Effect in CrN/GaN Van Der Waals Heterostructures

Generating Strong Electron Spin Polarization at Room Temperature in GaNAs Via Spin-Dependent Recombination

Efficient spin injection into graphene through a tunnel barrier: overcoming the spin conductance mismatch

Engineering of Tunnel Junctions for Prospective Spin Injection in Germanium

Spin Relaxation Induced by Interfacial Effects in N-Gan/mgo/co Spin Injectors

Significant enhancement of magnetic anisotropy and conductivity in GaN / CrI 3 van der Waals heterostructures via electrostatic doping

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature

Highly Efficient Spin Injection and Readout Across Van Der Waals Interface.