Abstract:Because digital information in semiconductor spintronics is encoded,stored,processed,and transferred by electron spins instead of its charge,the operation of a spintronic device requires that electrons in semiconductors are spin polarized.But spin states of electrons in traditional semiconductor materials are usually degenerate,therefore,conventional semiconductors cannot are directly exploited to design spintronic devices.Thus,how to spin polarized electrons in ordinary semiconductors (also called spin injection) including its effective manipulation has become an important direction of research.In physics,either Zeeman effect between electron spins and external magnetic fields or spin-orbit coupling of electron spins and its spatial momentums can be employed to achieve electron-spin polarization.According to these physical mechanisms,some effective schemes have been developed successfully,such as spin filtering,temporally separating electron-spins,spatial separations of electron spins,and so on.Utilizing theoretical analysis combined with numerical calculation,transmission time is investigated by considering both Zeeman effect as well as Rashba and Dresselhaus spin-orbit couplings for electron in magnetically confined semiconductor nanostructure,which is constructed on the GaAs/Al x Ga 1-x As heterostructure.Schrödinger equation of an electron is numerically solved by matrix diagonalization and improved transfer-matrix method.Adopting H.G.Winful's theory,dwell time of electron is calculated and spin polarization ratio is given.Due to Zeeman effect and spin-orbit coupling,dwell time of electron is obviously associated with the spins,which is used to separate electron-spins in time dimension and to realize spin polarization of electrons in semiconductors.Because the semiconductor GaAs has a small effective g-factor,electron-spin polarization originates mainly from spin-orbit coupling including Rashba and Dresselhaus types,which is circa 4 times larger than that induced by Zeeman effect.Dwell time of electron and its spin polarization can be efficaciously modified by interfacial confining electric-field or strain engineering,as the effective potential of electron is related to spin-orbit coupling's strength.These interesting findings not only have some references for spin injection into semiconductors,but also provide a controllable temporal electron-spin splitter for semiconductor spintronics device applications.

Generating Strong Electron Spin Polarization at Room Temperature in GaNAs Via Spin-Dependent Recombination

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature.

High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

Effect of Spin Polarization on Electron Recombination Dynamics in Bulk Intrinsic Gaas

High-efficient and Gate-Tunable Spin Transport in GaN Thin Film at Room Temperature

Near-band-gap photo-induced nuclear spin dynamics in semi-insulating GaAs: Hyperfine- and quadrupolar-driven relaxation

Spin-polarization Dependent Carrier Recombination Dynamics and Spin Relaxation Mechanism in Asymmetrically Doped (110) N-Gaas Quantum Wells

High-efficient spin injection in GaN through a lattice-matched tunnel layer

Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors

Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells

Room Temperature Gan-Based Spin Polarized Emitters

Energy-dependent Evolution of Electron Spin Polarization in Bulk Intrinsic GaAs

Spin transport study in a Rashba spin-orbit coupling system

Chirality-Induced Magnet-Free Spin Generation in a Semiconductor

Spin Relaxation Induced by Interfacial Effects in GaN/Al0.25Ga0.75N Heterostructures

Transmission time and spin polarization for electron in magnetically confined semiconducotr nanostructure modulated by spin-orbit coupling

Growth Direction Dependence Of The Electron Spin Dynamics In {111} Gaas Quantum Wells

Modulating Room Temperature Spin Injection into GaN Towards the High-Efficiency Spin-Light Emitting Diodes

Deep-level structure of the spin-active recombination center in dilute nitrides

Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

Optical and Spin Polarization Dynamics in Gase Nanoslabs