Abstract:The issues of generating and maintaining carrier spin polarization in semiconductors have attracted intense research efforts, not only due to their importance for future applications in spintronics but also due to the intriguing physics underpinning spin-dependent phenomena. Entering the family of semiconductors that exhibit attractive spin-dependent properties, Ga(In)NAs was most recently found to exhibit strong spin polarization of conducting electrons at room temperature upon N incorporation with an extremely long apparent spin lifetime. In this work we have uncovered the origin of the astonishing effect as being due to strong spin dependent recombination (SDR) via defects, by a combination of optical orientation and optically detected magnetic resonance (ODMR) studies. We were able to identify Ga self-interstitials and an As antisite complex to be the dominant defects participating in the SDR process. The involvement of these defects were unambiguously established by their unique spin-resonance signatures derived from the hyperfine interaction between the localized unpaired electron spin and nuclear spins (I=3/2) of the As and Ga atom - the core of the defects. These defects dominate in carrier capture and recombination leading to the observed strong dynamic polarization of electron spins. Further confirmation was found by the effects of growth conditions and post-growth treatments on the defect density that were closely correlated with the electron spin polarization.

Modulating Room Temperature Spin Injection into GaN Towards the High-Efficiency Spin-Light Emitting Diodes

High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

High-efficient spin injection in GaN through a lattice-matched tunnel layer

Spin-Polarized Injection into A P-Type Gaas Layer from A Co2mnal Injector

Spin Injection into Heavily-Doped N-Gan Via Schottky Barrier

Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

Large and Robust Electrical Spin Injection into GaAs at Zero Magnetic Field Using an Ultrathin CoFeB/MgO Injector

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature.

Spin Relaxation Induced by Interfacial Effects in N-Gan/mgo/co Spin Injectors

Spin injection and detection up to room temperature in Heusler~alloy/$n$-GaAs spin valves

Spin Injection, Relaxation, and Manipulation in GaN-based Semiconductors

Generating Strong Electron Spin Polarization at Room Temperature in GaNAs Via Spin-Dependent Recombination

Spin Relaxation Induced by Interfacial Effects in GaN/Al0.25Ga0.75N Heterostructures

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors

Room-temperature spin injection across a chiral perovskite/III–V interface

Room-temperature Spin-Oriented Photocurrent under Near-Infrared Irradiation and Comparison of Optical Means with Shubnikov De-Haas Measurements in AlxGa1−xN∕GaN Heterostructures

Electrical spin injection into InN semiconductor nanowires

Spin injection across a III-V/chiral perovskite interface enabling spin accumulation at room temperature

Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes