Abstract:The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via ohmic conduction. For detection a second ferromagnet can be used as drain. We studied submicron lateral spin valve junctions, based on high mobility InAs/AlSb two-dimensional electron gas (2DEG), with Ni, Co and Permalloy as ferromagnetic electrodes. In the standard geometry it is very difficult to separate true spin injection from other effects, including local Hall effect, anomalous magnetoresistance (AMR) contribution from the ferromagnetic electrodes and weak localization/anti-localization corrections, which can closely mimic the signal expected from spin valve effect. The reduction in size, and the use of a multiterminal non-local geometry allowed us to reduce the unwanted effects to a minimum. Despite all our efforts, we have not been able to observe spin injection. However, we find that this 'negative' result in these systems is actually consistent with theoretical predictions for spin transport in diffusive systems.

Spin Injection into Heavily-Doped N-Gan Via Schottky Barrier

High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

High-efficient spin injection in GaN through a lattice-matched tunnel layer

Modulating Room Temperature Spin Injection into GaN Towards the High-Efficiency Spin-Light Emitting Diodes

Lateral spin injection and detection through electrodeposited Fe/GaAs contacts

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Spin injection and detection up to room temperature in Heusler~alloy/$n$-GaAs spin valves

Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

Lateral Spin Injection in Germanium Nanowires

Spin Injection, Relaxation, and Manipulation in GaN-based Semiconductors

Hanle-Effect Measurements of Spin Injection from Mn5ge3c0.8/Al2o3-Contacts into Degenerately Doped Ge Channels on Si

Electrical spin injection and detection in lateral all-semiconductor devices

Electrical spin injection and detection in a semiconductor. Is it feasible?

Spin injection into ferromagnetic Co2MnAl by optical absorption in GaAs

Spin-Polarized Injection into A P-Type Gaas Layer from A Co2mnal Injector

Engineering of Tunnel Junctions for Prospective Spin Injection in Germanium

Spin-dependent transport in GaAs nanowire-based devices

Spin injection and detection in MnAs/GaAs/InAs hybrid system on GaAs(111)B through lateral non-local spin valve measurement at varied temperature

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

Spin Valve Effect in CrN/GaN Van Der Waals Heterostructures

Spin transport study in a Rashba spin-orbit coupling system