Abstract:In this Letter, we report the electrical spin injection and detection in Ge nanowire transistors with single-crystalline ferromagnetic Mn5Ge3 as source/drain contacts formed by thermal reactions. Degenerate indium dopants were successfully incorporated into as-grown Ge nanowires as p-type doping to alleviate the conductivity mismatch between Ge and Mn5Ge3. The magnetoresistance (MR) of the Mn5Ge3/Ge/Mn5Ge3 nanowire transistor was found to be largely affected by the applied bias. Specifically, negative and hysteretic MR curves were observed under a large current bias in the temperature range from T = 2 K up to T = 50 K, which clearly indicated the electrical spin injection from ferromagnetic Mn5Ge3 contacts into Ge nanowires. In addition to the bias effect, the MR amplitude was found to exponentially decay with the Ge nanowire channel length; this fact was explained by the dominated Elliot-Yafet spin-relaxation mechanism. The fitting of MR further revealed a spin diffusion length of lsf = 480 ± 13 nm and a spin lifetime exceeding 244 ps at T = 10 K in p-type Ge nanowires, and they showed a weak temperature dependence between 2 and 50 K. Ge nanowires showed a significant enhancement in the measured spin diffusion length and spin lifetime compared with those reported for bulk p-type Ge. Our study of the spin transport in the Mn5Ge3/Ge/Mn5Ge3 nanowire transistor points to a possible realization of spin-based transistors; it may also open up new opportunities to create novel Ge nanowire-based spintronic devices. Furthermore, the simple fabrication process promises a compatible integration into standard Si technology in the future.

Hanle-Effect Measurements of Spin Injection from Mn5ge3c0.8/Al2o3-Contacts into Degenerately Doped Ge Channels on Si

Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors.

Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas

Electrical Detection of Spin Transport in Si Two-Dimensional Electron Gas Systems

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Electrical spin injection and transport in germanium

Lateral Spin Injection in Germanium Nanowires

All-Electrical Measurements of Direct Spin Hall Effect in Gaas with Esaki Diode Electrodes

Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application

Characterization of Mn5Ge3 Contacts on a Shallow Ge/SiGe Heterostructure

Spin injection and detection in lanthanum- and niobium-doped SrTiO 3 using the Hanle technique

Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Spin Injection into Heavily-Doped N-Gan Via Schottky Barrier

Spin injection and detection up to room temperature in Heusler~alloy/$n$-GaAs spin valves

Spin Transport in Ge Nanowires for Diluted Magnetic Semiconductor-Based Nonvolatile Transpinor

Electrical spin injection and detection in lateral all-semiconductor devices

Engineering of Tunnel Junctions for Prospective Spin Injection in Germanium

Simulation of spin-polarized transport in SiGe/Ge/SiGe geterostructure

An experimental demonstration of room-temperature spin transport in n-type Germanium epilayers

Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

Lateral spin injection and detection through electrodeposited Fe/GaAs contacts