Abstract:Ge two-dimensional hole gases in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge two-dimensional hole gas (2DHG) can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG - a prerequisite for the realization of spintronic devices - has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm. We observe a magnetoresistance signal for temperatures below 13 K possibly arising from successful spin injection. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to achieve efficient electrical injection of spins into germanium two - dimensional hole gas (Ge 2DHG), which is a prerequisite for constructing spintronic devices. Specifically, the paper focuses on the following aspects: 1. **Efficient Electrical Injection of Spins**: There are no reports of successful electrical injection of spins into Ge 2DHG so far. This research aims to verify whether efficient electrical injection of spins can be achieved by fabricating and testing lateral spin - valve devices based on the Mn₅Ge₃/Ge 2DHG/Mn₅Ge₃ structure. 2. **CMOS Compatibility**: Ge 2DHG has the potential to be compatible with existing complementary metal - oxide - semiconductor (CMOS) technology. The research hopes to promote the development of CMOS - compatible spintronic devices through the successful implementation of electrical injection of spins. 3. **Low - Temperature Magnetoresistance Measurement**: Through magnetoresistance measurements at low temperatures, observe whether there are magnetoresistance signals due to spin injection. The experimental results show that when the temperature is below 13 K, magnetoresistance signals that may be caused by successful spin injection can be observed. ### Main Contributions of the Paper - **First Achievement of Electrical Injection of Spins into Ge 2DHG**: The research team observed magnetoresistance signals that may be caused by spin injection at low temperatures by preparing and testing Mn₅Ge₃/Ge 2DHG/Mn₅Ge₃ lateral spin - valve devices. - **Verification of Spin - Transport Properties**: Through magnetoresistance measurements at different currents and temperatures, the spin - transport properties in Ge 2DHG were confirmed, and the spin - flip length was estimated. - **Exploration of the Possibility of Spin Manipulation**: The research results provide a basis for further exploration of efficient spin manipulation in Ge 2DHG, which is crucial for future spintronic devices such as spin field - effect transistors (spin FET). ### Key Experimental Results - **Observation of Magnetoresistance Signals**: When the temperature is below 13 K, obvious giant magnetoresistance (GMR) signals were observed, which may be due to the successful injection of spins into Ge 2DHG. - **Estimation of Spin - Flip Length**: According to the quantum scattering time and the diffusion constant, the spin - flip length was estimated to be approximately \( l_{sf}=\sqrt{D\tau_q}\approx(133.84\pm0.01)\, \text{nm} \), where \( D = (395.2\pm4.7)\, \text{cm}^2/\text{s} \) is the diffusion constant of holes in Ge 2DHG, and \( \tau_q=(0.45\pm0.01)\, \text{ps} \) is the quantum scattering time. These results provide important experimental basis and technical support for the future development of CMOS - compatible spintronic devices.

Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application

Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors.

High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits

Hanle-Effect Measurements of Spin Injection from Mn5ge3c0.8/Al2o3-Contacts into Degenerately Doped Ge Channels on Si

Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

Characterization of Mn5Ge3 Contacts on a Shallow Ge/SiGe Heterostructure

(Invited) Growth of MnGe Nanostructures for Spintronics Applications

Spin Transport in Ge Nanowires for Diluted Magnetic Semiconductor-Based Nonvolatile Transpinor

Light-hole spin confined in germanium

Ge hole spin qubit

Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Magnetic Mn-Doped Ge Nanostructures

Investigating the strain controlled epitaxial growth of Mn 3 Ge films through thickness modulation

Strong in-plane magnetic anisotropy (Co0.15Fe0.85)5GeTe2/graphene van der Waals heterostructure spin-valve at room temperature

Nanoscale Engineering of Ge based Diluted Magnetic Semiconductors for Room Temperature Spintronics Application

Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures

Half-metallic transport and spin-polarized tunneling through the van der Waals ferromagnet Fe${_4}$GeTe$_{2}$