Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application

Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors.

High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits

Hanle-Effect Measurements of Spin Injection from Mn5ge3c0.8/Al2o3-Contacts into Degenerately Doped Ge Channels on Si

Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

Characterization of Mn5Ge3 Contacts on a Shallow Ge/SiGe Heterostructure

(Invited) Growth of MnGe Nanostructures for Spintronics Applications

Spin Transport in Ge Nanowires for Diluted Magnetic Semiconductor-Based Nonvolatile Transpinor

Light-hole spin confined in germanium

Ge hole spin qubit

Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits

Spin Polarization and Electronic Structure of Ferromagnetic Mn5ge3 Epilayers

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Magnetic Mn-Doped Ge Nanostructures

Investigating the strain controlled epitaxial growth of Mn 3 Ge films through thickness modulation

Strong in-plane magnetic anisotropy (Co0.15Fe0.85)5GeTe2/graphene van der Waals heterostructure spin-valve at room temperature

Nanoscale Engineering of Ge based Diluted Magnetic Semiconductors for Room Temperature Spintronics Application

Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures