Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures

Zhe Wang,Deepak Sapkota,Takashi Taniguchi,Kenji Watanabe,David Mandrus,Alberto F. Morpurgo

DOI: https://doi.org/10.1021/acs.nanolett.8b01278

2018-06-14

Abstract:Thin van der Waals (vdW) layered magnetic materials disclose the possibility to realize vdW heterostructures with new functionalities. Here we report on the realization and investigation of tunneling spin valves based on van der Waals heterostructures consisting of an atomically thin hBN layer acting as tunnel barrier and two exfoliated Fe3GeTe2 crystals acting as ferromagnetic electrodes. Low-temperature anomalous Hall effect measurements show that thin Fe3GeTe2 crystals are metallic ferromagnets with an easy axis perpendicular to the layers, and a very sharp magnetization switching at magnetic field values that depend slightly on their geometry. In Fe3GeTe2/hBN/Fe3GeTe2 heterostructures, we observe a textbook behavior of the tunneling resistance, which is minimum (maximum) when the magnetization in the two electrodes is parallel (antiparallel) to each other. The magnetoresistance is 160% at low temperature, from which we determine the spin polarization of Fe3GeTe2 to be 0.66, corresponding to 83% and 17% of majority and minority carriers, respectively. The measurements also show that, with increasing temperature, the evolution of the spin polarization extracted from the tunneling magnetoresistance is proportional to the temperature dependence of the magnetization extracted from the analysis of the anomalous Hall conductivity. This suggests that the magnetic properties of the surface are representative of those of the bulk, as it may be expected for vdW materials.

Mesoscale and Nanoscale Physics,Materials Science,Applied Physics

What problem does this paper attempt to address?

This paper aims to solve the key problems of tunnel spin valves based on van der Waals heterostructures. Specifically, the researchers used atomically thin hexagonal boron nitride (hBN) as a tunneling barrier and two exfoliated Fe₃GeTe₂ crystals as ferromagnetic electrodes to construct a new type of tunnel spin - valve device. Through this design, they hope to achieve the following goals:

1. **Verify the magnetic properties of Fe₃GeTe₂**: The researchers first confirmed through anomalous Hall effect measurements that the Fe₃GeTe₂ thin layer exhibits metallic ferromagnetism at low temperatures, with its magnetization direction perpendicular to the crystal plane and very sharp magnetization reversal characteristics.

2. **Achieve a high - efficiency tunnel spin valve**: By constructing the Fe₃GeTe₂/hBN/Fe₃GeTe₂ van der Waals heterostructure, the researchers observed typical tunnel resistance behavior, that is, the resistance is the smallest when the magnetization directions of the two electrodes are parallel and the largest when they are antiparallel. This indicates that the device has successfully achieved the function of a tunnel spin valve.

3. **Evaluate the spin polarization rate**: Through the measurement of tunnel magnetoresistance (TMR), the researchers determined that the spin polarization rate of Fe₃GeTe₂ is 0.66, corresponding to 83% majority carriers and 17% minority carriers. This value is much higher than that of tunnel spin valves made of traditional metallic ferromagnetic materials.

4. **Study of temperature dependence**: The researchers also explored how the spin polarization rate changes as the temperature rises. The experimental results show that the decrease in the spin polarization rate with temperature is consistent with the change trend of the anomalous Hall conductivity, indicating that the surface spin polarization is closely related to the magnetization properties of the bulk material.

In summary, the main purpose of this paper is to show how to use the high - quality surface characteristics of van der Waals materials to construct efficient tunnel spin valves and experimentally verify the performance of these devices at low temperatures, providing a theoretical and experimental basis for further development of spintronics devices based on two - dimensional materials.