Room-Temperature and Tunable Tunneling Magnetoresistance in Fe₃GaTe₂-Based 2D van der Waals Heterojunctions

Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang

DOI: https://doi.org/10.1021/acsami.3c06167

2023-01-01

Abstract:Magnetic tunnel junctions (MTJs) based on van der Waals(vdW) heterostructureswith sharp and clean interfaces on the atomic scale are essentialfor the application of next-generation spintronics. However, the lackof room-temperature intrinsic ferromagnetic crystals with perpendicularmagnetic anisotropy has greatly hindered the development of verticalMTJs. The discovery of room-temperature intrinsic ferromagnetic two-dimensional(2D) crystal Fe3GaTe2 has solved the problemand greatly facilitated the realization of practical spintronic devices.Here, we demonstrate a room-temperature MTJ based on a Fe3GaTe2/WS2/Fe3GaTe2 heterostructurefor the first time. The tunneling magnetoresistance (TMR) ratio isup to 213% with a high spin polarization of 72% at 10 K, the highestever reported in Fe3GaTe2-based MTJs up to now.A tunneling spin-valve signal robustly persists at room temperature(300 K) with a bias current down to 10 nA. Moreover, the spin polarizationcan be modulated by bias current and the TMR shows a sign reversalat a large bias current. Our work sheds light on the potential applicationof low-energy consumption in all-2D vdW spintronics and offers alternativeroutes for the electronic control of spintronic devices.