Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Yanan Yuan,Daxiang Liu,Jingjing Yu,Guanhua Zhang,Xiang Chen,Ruiqi Liu,Siyu Wang,Fangfang Pei,Long Wei,Zhi Li,Junming Guo,Shouguo Wang,Zhaoliang Liao,Wensheng Yan,Ziqiang Qiu,Mengmeng Yang,Qian Li
DOI: https://doi.org/10.1063/5.0168468
IF: 6.6351
2023-01-01
APL Materials
Abstract:The creation of van der Waals (vdW) ferromagnets with tunable Curie temperature (TC) and magnetic anisotropy is essential in developing vdW magnet-based devices. Here, we report an effective and reliable method for modulating the magnetic properties of vdW Fe5GeTe2 by site-specific Ga+ implantation. In this study, we report an easy axis in the ab-plane for bulk Fe5GeTe2 (TC = 310 K) and an axis out of the plane for thin Fe5GeTe2 flakes (TC = 290 K). Combining element-resolved photoemission electron microscopy and spatially resolved magneto-optic Kerr microscopy, we find that the implantation of a tiny amount of 10−3 Ga+·Å−3 in Fe5GeTe2 greatly enhances the TC from 290 to 360 K and switches the magnetic easy axis from the out-of-plane c axis to the ab-plane. The room-temperature x-ray magnetic circular dichroism signal is enhanced from 0% to 9% at an implantation level of 10−2 Ga+·Å−3. These results provide new opportunities for tailoring the magnetic properties of vdW materials beyond room temperature.
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