Abstract:The p-symmetry of the hole wavefunction is associated with a weaker hyperfine interaction as compared to electrons, thus making hole spin qubits attractive candidates to implement long coherence quantum processors. However, recent studies demonstrated that hole qubits in planar germanium (Ge) heterostructures are still very sensitive to nuclear spin bath. These observations highlight the need to develop nuclear spin-free Ge qubits to suppress this decoherence channel and evaluate its impact. With this perspective, this work demonstrates the epitaxial growth of $^\text{73}$Ge-depleted isotopically enriched $^\text{70}$Ge/SiGe quantum wells. The growth was achieved by reduced pressure chemical vapor deposition using isotopically purified monogermane $^\text{70}$GeH$_\text{4}$ and monosilane $^\text{28}$SiH$_\text{4}$ with an isotopic purity higher than 99.9 $\%$ and 99.99 $\%$, respectively. The quantum wells consist of a series of $^\text{70}$Ge/SiGe heterostructures grown on Si wafers using a Ge virtual substrate and a graded SiGe buffer layer. The isotopic purity is investigated using atom probe tomography following an analytical procedure addressing the discrepancies in the isotopic content caused by the overlap of isotope peaks in mass spectra. The nuclear spin background in the quantum wells was found to be sensitive to the growth conditions. The lowest concentration of nuclear spin-full isotopes $^\text{73}$Ge and $^\text{29}$Si in the heterostructure was established at 0.01 $\%$ in the Ge quantum well and SiGe barriers. The measured average distance between nuclear spins reaches 3-4 nm in $^\text{70}$Ge/$^\text{28}$Si$^\text{70}$Ge, which is an order of magnitude larger than in natural Ge/SiGe heterostructures.

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Nuclear Spin-Depleted, Isotopically Enriched 70 Ge/28 Si70 Ge Quantum Wells

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Progress of Gate-Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

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Modelling of planar germanium hole qubits in electric and magnetic fields

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Why Experiments Fail to Detect the Finite Linear Rashba Spin-Orbit Coupling of Two-Dimensional Holes in Semiconductor Quantum Wells: the Case of Ge/SiGe Quantum Wells

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Modeling of planar germanium hole qubits in electric and magnetic fields

Quantum Transport Quality of a Processed Undoped Ge/SiGe Heterostructure

Strong hole-photon coupling in planar Ge for probing charge degree and strongly-correlated states

Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

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