A singlet-triplet hole spin qubit in planar Ge
Daniel Jirovec,Andrea Hofmann,Andrea Ballabio,Philipp M. Mutter,Giulio Tavani,Marc Botifoll,Alessandro Crippa,Josip Kukucka,Oliver Sagi,Frederico Martins,Jaime Saez-Mollejo,Ivan Prieto,Maksim Borovkov,Jordi Arbiol,Daniel Chrastina,Giovanni Isella,Georgios Katsaros
DOI: https://doi.org/10.1038/s41563-021-01022-2
IF: 41.2
2021-06-03
Nature Materials
Abstract:Spin qubits are considered to be among the most promising candidates for building a quantum processor. Group IV hole spin qubits are particularly interesting owing to their ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor–semiconductor integration. Here, we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole <i>g</i>-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled <i>g</i>-factor difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 μs, which we extend beyond 150 μs using echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the-art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are comparable with those of Ge single spin qubits, but singlet-triplet qubits can be operated at much lower fields, emphasizing their potential for on-chip integration with superconducting technologies.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter