Jonathan H. Prechtel,Franziska Maier,Julien Houel,Andreas V. Kuhlmann,Arne Ludwig,Andreas D. Wieck,Daniel Loss,Richard J. Warburton
Abstract:We report a large g-factor tunability of a single hole spin in an InGaAs quantum dot via an electric field. The magnetic field lies in the in-plane direction x, the direction required for a coherent hole spin. The electrical field lies along the growth direction z and is changed over a large range, 100 kV/cm. Both electron and hole g-factors are determined by high resolution laser spectroscopy with resonance fluorescence detection. This, along with the low electrical-noise environment, gives very high quality experimental results. The hole g-factor g_xh depends linearly on the electric field Fz, dg_xh/dFz = (8.3 +/- 1.2)* 10^-4 cm/kV, whereas the electron g-factor g_xe is independent of electric field, dg_xe/dFz = (0.1 +/- 0.3)* 10^-4 cm/kV (results averaged over a number of quantum dots). The dependence of g_xh on Fz is well reproduced by a 4x4 k.p model demonstrating that the electric field sensitivity arises from a combination of soft hole confining potential, an In concentration gradient and a strong dependence of material parameters on In concentration. The electric field sensitivity of the hole spin can be exploited for electrically-driven hole spin rotations via the g-tensor modulation technique and based on these results, a hole spin coupling as large as ~ 1 GHz is expected to be envisaged.
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is to explore the adjustment of the hole g - factor (g - factor) by an electric field in self - assembled quantum dots in order to achieve rapid hole - spin rotation. Specifically, the research focuses on:
1. **The influence of the electric field on the hole g - factor**: The paper shows that in InGaAs quantum dots, the g - factor of a single - hole spin is extremely sensitive to the electric field applied along the growth direction (z - direction). This sensitivity can be utilized to achieve electrically - driven hole - spin rotation through g - tensor modulation techniques.
2. **Improvement of experimental methods**: In order to measure the g - factor more accurately, the authors used resonant laser spectroscopy combined with resonant fluorescence detection techniques. This method has a higher resolution than the traditional non - resonant excitation method and reduces electrical noise and space - charge effects, thereby improving the quality of experimental results.
3. **Verification of theoretical models**: Through the 4×4 k·p model, the authors explained the experimentally observed dependence of the g - factor on the electric field. The model takes into account factors such as the softness of the hole - confinement potential, the indium - concentration gradient, and the strong dependence of material parameters on the indium concentration, and successfully reproduced the experimental results.
4. **Potential applications**: Based on these results, the paper predicts that hole - spin coupling as high as 1 GHz can be achieved by modulating the g - tensor with an alternating - current electric field, which provides new possibilities for future quantum - information - processing technologies.
### Main findings
- **Electron g - factor**: The electron g - factor \( g_x^e \) is insensitive to the electric field, and its value is approximately \( - 0.39 \).
- **Hole g - factor**: The hole g - factor \( g_x^h \) shows a strong linear dependence on the electric field, and its slope is \( \frac{d g_x^h}{d F_z}=(8.3 \pm 1.2)\times10^{-4} \text{cm/kV} \).
- **Consistency between theory and experiment**: The theoretical model successfully explains the experimentally observed dependence of the g - factor on the electric field, especially for 2.4 - nm - high quantum dots, where the theoretical and experimental results are highly consistent.
### Potential impacts
- **Quantum computing**: By controlling the hole - spin with an electric field, faster spin operations can be achieved, which is of great significance for constructing solid - state qubits based on quantum dots.
- **Spintronics**: The research results provide theoretical and technical support for the development of new spintronic devices.
In summary, this paper, through a combination of experimental and theoretical methods, deeply explores the influence of the electric field on the hole g - factor in InGaAs quantum dots, laying the foundation for future applications in the fields of quantum - information processing and spintronics.