Tunable g factor and phonon-mediated hole spin relaxation in Ge/Si nanowire quantum dots

Franziska Maier,Christoph Kloeffel,Daniel Loss

DOI: https://doi.org/10.1103/PhysRevB.87.161305

2013-04-24

Abstract:We theoretically consider g factor and spin lifetimes of holes in a longitudinal Ge/Si core/shell nanowire quantum dot that is exposed to external magnetic and electric fields. For the ground states, we find a large anisotropy of the g factor which is highly tunable by applying electric fields. This tunability depends strongly on the direction of the electric field with respect to the magnetic field. We calculate the single-phonon hole spin relaxation times T1 for zero and small electric fields and propose an optimal setup in which very large T1 of the order of tens of milliseconds can be reached. Increasing the relative shell thickness or the longitudinal confinement length further prolongs T1. In the absence of electric fields, the dephasing vanishes and the decoherence time T2 is determined by T2 = 2 T1.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: in germanium/silicon (Ge/Si) core - shell nanowire quantum dots, to regulate the g - factor of holes and study their spin relaxation time by applying external electric and magnetic fields. Specifically, the author focuses on the following aspects:

1. **Anisotropy and tunability of the g - factor**:
- The g - factor of holes in longitudinal Ge/Si core - shell nanowire quantum dots was studied, and it was found to have significant anisotropy.
- By applying electric fields with different directions and intensities, the g - factor can be highly tuned.

2. **Spin relaxation time \(T_1\)**:
- The single - phonon - mediated hole spin relaxation time \(T_1\), especially in the cases of zero and small electric fields, was calculated.
- An optimal configuration was proposed, which can achieve a \(T_1\) time of up to tens of milliseconds in such nanowire quantum dots.

3. **Dephasing time and decoherence time \(T_2\)**:
- In the absence of an electric field, the dephasing time \(T_{\phi}\) is zero, so the decoherence time \(T_2\) is determined by \(T_2 = 2T_1\).
- After applying an electric field, due to the spin - orbit interaction (SOI), the dephasing time \(T_{\phi}\) is no longer zero, resulting in \(T_2 < 2T_1\).

4. **Optimal configuration**:
- Studies have shown that in order to obtain the longest \(T_1\), the magnetic field should be perpendicular to the nanowire, and the electric field should be perpendicular to both the magnetic field and the nanowire at the same time.

Through these studies, the author hopes to provide theoretical support for hole - spin - based quantum computing and guidance for experimental design to achieve longer spin relaxation times and better qubit performance.

### Formula summary
- Relationship between the g - factor and the magnetic field:
\[
g_{\text{eff}}=\frac{\Delta E_Z^{\text{num}}}{\mu_B|B|}
\]
where \(\Delta E_Z^{\text{num}}\) is the Zeeman splitting energy obtained by numerical calculation, and \(\mu_B\) is the Bohr magneton.

- Expression for the spin relaxation rate \(T_1^{-1}\) (under the Born - Markov approximation):
\[
\frac{1}{T_1}=n_i n_j\left[\delta_{ij}(\delta_{pq}-n_p n_q)J^+_{pq}(\omega)-(\delta_{ip}-n_i n_p)J^+_{pj}(\omega)-\delta_{ij}\epsilon_{kpq}n_k I^-_{pq}(\omega)+\epsilon_{ipq}n_p I^-_{qj}(\omega)\right]
\]
where \(n = \frac{B_{\text{eff}}}{|B_{\text{eff}}|}\) is the unit vector in the direction of the effective magnetic field, and \(\hbar\omega=\hbar\omega_Z^{\text{eff}}=\Delta E_Z^{\text{eff}}\) is the energy splitting of the considered state.

- Effective Hamiltonian \(H_{\text{eff}}\):
\[
H_{\text{eff}}=H_{Z,\text{eff}}+H_{s - \text{ph},\text{eff}}=\mu_B(B_{\text{eff}}+\delta B(t))\cdot\sigma
\]

These formulas show the relationships between the g - factor, spin relaxation time, and effective Hamiltonian, which are helpful for understanding the behavior of hole spins in nanowire quantum dots.