Electrical control of a spin qubit in InSb nanowire quantum dots: strongly suppressed spin relaxation in high magnetic field

Suzana Miladić,Pavle Stipsić,Edib Dobardžić,Marko Milivojević

DOI: https://doi.org/10.1103/PhysRevB.101.155307

2020-04-22

Abstract:In this paper, we investigate the impact of gating potential and magnetic field on phonon induced spin relaxation rate and the speed of the electrically driven single-qubit operations inside the InSb nanowire spin qubit. We show that a strong $g$ factor and high magnetic field strength lead to the prevailing influence of electron-phonon scattering due to deformation potential, considered irrelevant for materials with a weak $g$ factor, like GaAs or Si/SiGe. In this regime, we find that spin relaxation between qubit states is significantly suppressed due to the confinement perpendicular to the nanowire axis. We also find that maximization of the number of single-qubit operations that can be performed during the lifetime of the spin qubit requires single quantum dot gating potential.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

### What problems does this paper attempt to solve?

This paper aims to explore the optimal conditions for realizing the electrically - controlled operation of spin qubits in InSb nanowire quantum dots (QDs). In particular, it studies the influence of gate potential and magnetic field on phonon - induced spin relaxation rate and the speed of single - qubit operation. Specifically, the article mainly solves the following key problems:

1. **Spin relaxation in materials with strong g - factor**:
- The InSb material has a very strong effective Landé g - factor, which makes electron - phonon scattering have a significant impact on spin relaxation. The article studies how to suppress spin relaxation in this case and ensure effective electrically - controlled spin operations.
- Under a high magnetic field, due to the strong g - factor, scattering caused by the deformation potential becomes particularly important. The article analyzes how to optimize the operation of spin qubits by adjusting the gate potential under such conditions.

2. **Optimization of electrically - controlled spin qubits**:
- The article explores how to maximize the number of single - qubit operations and minimize the spin relaxation time by adjusting the gate potential, magnetic field direction and intensity. In particular, in the double quantum dot (DQD) structure, the article studies the influence of asymmetric gate potential on the performance of spin qubits.
- A figure of merit, defined as the ratio of the Rabi frequency to the total spin relaxation rate, is proposed to quantitatively evaluate the quality of spin qubits.

3. **Three - dimensional confinement effect**:
- The article also studies the influence of three - dimensional confinement effect perpendicular to the nanowire axis on the spin relaxation rate. Under a strong magnetic field, the confinement in the y - z plane has a significant impact on the spin relaxation rate, which is verified by numerical calculation in the article.

4. **Applicability under experimental conditions**:
- Through theoretical models and numerical simulations, the article explores how to optimize the operation of InSb nanowire spin qubits under different experimental conditions (such as different gate potentials, magnetic field intensities and directions). These results are applicable not only to InSb materials but also to other materials with strong g - factor.

### Summary

The main purpose of this paper is to find the best conditions for realizing efficient electrically - controlled spin qubits in InSb nanowire quantum dots through theoretical analysis and numerical simulation, with particular attention to how to optimize the spin relaxation rate and the speed of single - qubit operation under strong g - factor and high magnetic field conditions.